 | |  | |
| PartNumber | IPB65R225C7ATMA1-CUT TAPE | IPB65R225C7 | IPB65R225C7ATMA1 |
| Description | MOSFET N-Ch 700V 41A D2PAK-2 | MOSFET N-Ch 700V 41A D2PAK-2 | |
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | XPB65R225 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | IPB65R225C7 SP000992480 |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | CoolMOS |
| Package Case | - | - | TO-263-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 63 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 10 ns |
| Rise Time | - | - | 6 ns |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 41 A |
| Vds Drain Source Breakdown Voltage | - | - | 700 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3.5 V |
| Rds On Drain Source Resistance | - | - | 225 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 48 ns |
| Typical Turn On Delay Time | - | - | 9 ns |
| Qg Gate Charge | - | - | 20 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB65R225C7ATMA2 | MOSFET N-CH 650V 11A TO-263-3 | |
| IPB65R225C7ATMA1 | MOSFET N-Ch 700V 41A D2PAK-2 | ||
| IPB65R225C7ATMA1-CUT TAPE | New and Original | ||
| IPB65R225C7 | MOSFET N-Ch 700V 41A D2PAK-2 |