PartNumber | IPB80N04S3-06 | IPB80N04S3-04 | IPB80N04S3-03 |
Description | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
Id Continuous Drain Current | 80 A | 80 A | 80 A |
Rds On Drain Source Resistance | 5.8 mOhms | 3.9 mOhms | 3.5 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 100 W | 136 W | 188 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 4.4 mm | 4.4 mm | 4.4 mm |
Length | 10 mm | 10 mm | 10 mm |
Series | OptiMOS-T | OptiMOS-T | OptiMOS-T |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.25 mm | 9.25 mm | 9.25 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 10 ns | 10 ns | 14 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | 12 ns | 17 ns |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 20 ns | 30 ns | 39 ns |
Typical Turn On Delay Time | 15 ns | 20 ns | 25 ns |
Part # Aliases | IPB80N04S306ATMA1 IPB8N4S36XT SP000254822 | IPB80N04S304ATMA1 IPB8N4S34XT SP000261217 | IPB80N04S303ATMA1 IPB8N4S33XT SP000260848 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |