IPB80N04S3-0

IPB80N04S3-06 vs IPB80N04S3-04 vs IPB80N04S3-03

 
PartNumberIPB80N04S3-06IPB80N04S3-04IPB80N04S3-03
DescriptionMOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-TMOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-TMOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V40 V
Id Continuous Drain Current80 A80 A80 A
Rds On Drain Source Resistance5.8 mOhms3.9 mOhms3.5 mOhms
Vgs Gate Source Voltage20 V20 V20 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation100 W136 W188 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
QualificationAEC-Q101AEC-Q101AEC-Q101
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height4.4 mm4.4 mm4.4 mm
Length10 mm10 mm10 mm
SeriesOptiMOS-TOptiMOS-TOptiMOS-T
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width9.25 mm9.25 mm9.25 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time10 ns10 ns14 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time10 ns12 ns17 ns
Factory Pack Quantity100010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time20 ns30 ns39 ns
Typical Turn On Delay Time15 ns20 ns25 ns
Part # AliasesIPB80N04S306ATMA1 IPB8N4S36XT SP000254822IPB80N04S304ATMA1 IPB8N4S34XT SP000261217IPB80N04S303ATMA1 IPB8N4S33XT SP000260848
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB80N04S3-06 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
IPB80N04S3-04 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
IPB80N04S3-03 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
IPB80N04S3-03 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
IPB80N04S3-04 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
IPB80N04S3-06 IGBT Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
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