IPB80

IPB80N03S4L-02 vs IPB80N03S4L-03 vs IPB80N03S4L02ATMA1

 
PartNumberIPB80N03S4L-02IPB80N03S4L-03IPB80N03S4L02ATMA1
DescriptionMOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2MOSFET N-CH 30V 80A TO263-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current80 A80 A-
Rds On Drain Source Resistance2.4 mOhms2 mOhms-
Vgs Gate Source Voltage16 V16 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation136 W136 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS-T2OptiMOS-T2-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time13 ns13 ns-
Product TypeMOSFETMOSFET-
Rise Time9 ns9 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time62 ns62 ns-
Typical Turn On Delay Time14 ns14 ns-
Part # AliasesIPB80N03S4L02ATMA1 IPB8N3S4L2XT SP000273282IPB80N03S4L03ATMA1 IPB8N3S4L3XT SP000274982-
Unit Weight0.139332 oz0.139332 oz-
Vgs th Gate Source Threshold Voltage-1 V-
Qg Gate Charge-140 nC-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB80N04S2H4ATMA2 MOSFET N-CHANNEL_30/40V
IPB80N04S204ATMA2 MOSFET N-CHANNEL_30/40V
IPB80N04S4-03 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2
IPB80N03S4L-02 MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
IPB80N03S4L-03 MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
IPB80N03S4L03ATMA1 MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
IPB80N04S4-04 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2
IPB80N04S3-06 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
IPB80N04S3-04 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
IPB80N04S3-03 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
IPB80N03S4L02ATMA1 MOSFET N-CH 30V 80A TO263-3
IPB80N04S403ATMA1 MOSFET N-CH 40V 80A TO263-3-2
IPB80N04S306ATMA1 MOSFET N-CH 40V 80A TO263-3
IPB80N04S304ATMA1 MOSFET N-CH 40V 80A TO263-3
IPB80N04S204ATMA2 MOSFET N-CH 40V 80A TO263-3
IPB80N04S204ATMA1 MOSFET N-CH 40V 80A TO263-3
IPB80N04S2H4ATMA1 MOSFET N-CH 40V 80A TO263-3
IPB80N03S4L03ATMA1 MOSFET N-CH 30V 80A TO263-3
IPB80N04S2H4ATMA2 MOSFET N-CHANNEL_30/40V
IPB80N04S2L03ATMA1 MOSFET N-CH 40V 80A TO263-3
IPB80N04S303ATMA1 MOSFET N-CH 40V 80A TO263-3
IPB80N04S3H4ATMA1 MOSFET N-CH 40V 80A TO263-3
IPB80N04S404ATMA1 MOSFET N-CH 40V 80A TO263-3-2
Infineon Technologies
Infineon Technologies
IPB80N04S403ATMA1 MOSFET N-CHANNEL_30/40V
IPB80N04S306ATMA1 MOSFET N-CHANNEL_30/40V
IPB80N04S404ATMA1 MOSFET N-CHANNEL_30/40V
IPB80N04S3H4ATMA1 MOSFET N-CHANNEL_30/40V
IPB80N04S304ATMA1 MOSFET N-CHANNEL_30/40V
IPB80N04S303ATMA1 MOSFET N-CHANNEL_30/40V
IPB80CN10NG New and Original
IPB80N03L New and Original
IPB80N03S4L-03 Trans MOSFET N-CH 30V 80A 3-Pin TO-263 T/R (Alt: IPB80N03S4L-03)
IPB80N03S4L-03(1) New and Original
IPB80N03S4L03 Power Field-Effect Transistor, 80A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB80N04S2 New and Original
IPB80N04S2-H4 Trans MOSFET N-CH 40V 80A 3-Pin TO-263 T/R (Alt: IPB80N04S2-H4)
IPB80N04S2-H4 INFINEON Y New and Original
IPB80N04S2H4 New and Original
IPB80N04S2L-03 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS
IPB80N04S3 New and Original
IPB80N04S4-04 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2
IPB80N04S4-H0 New and Original
IPB80N04S403ATMA1INFINEO New and Original
IPB80N03S4L-02 Darlington Transistors MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
IPB80N04S3-03 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
IPB80N04S3-04 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
IPB80N04S3-H4 MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
IPB80N04S4-03 IGBT Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2
IPB80N04S3-06 IGBT Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
IPB80N04S2-04 RF Bipolar Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS
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