 | |  | |
| PartNumber | IPB80P04P4-05 | IPB80P04P405ATMA1 | IPB80P04P407ATMA1 |
| Description | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | MOSFET P-CH TO263-3 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 80 A | 80 A | - |
| Rds On Drain Source Resistance | 3.7 mOhms | 3.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 151 nC | 151 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 125 W | 125 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS-P2 | xPB80P04 | IPB80P04 |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 65 ns | 65 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 24 ns | 24 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 73 ns | 73 ns | - |
| Typical Turn On Delay Time | 42 ns | 42 ns | - |
| Part # Aliases | IPB80P04P405ATMA1 IPB8P4P45XT SP000652618 | IPB80P04P4-05 IPB8P4P45XT SP000652618 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.068654 oz |
| Part Aliases | - | - | IPB80P04P4-07 IPB80P04P407XT SP000842038 |
| Package Case | - | - | TO-263-3 |
| Pd Power Dissipation | - | - | 88 W |
| Id Continuous Drain Current | - | - | - 80 A |
| Vds Drain Source Breakdown Voltage | - | - | - 40 V |
| Rds On Drain Source Resistance | - | - | 7.4 mOhms |
| Qg Gate Charge | - | - | 25 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB80P04P4L-08 | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | |
| IPB80P04P4-05 | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | ||
| IPB80P04P4L-04 | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | ||
| IPB80P04P405ATMA1 | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | ||
| IPB80P04P4L-06 | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | ||
| IPB80P04P405ATMA1 | MOSFET P-CH TO263-3 | ||
| IPB80P04P407ATMA1 | MOSFET P-CH TO263-3 | ||
| IPB80P04P4L08ATMA1 | MOSFET P-CH TO263-3 | ||
| IPB80P04P4L04ATMA1 | MOSFET P-CH TO263-3 | ||
| IPB80P04P4L06ATMA1 | MOSFET P-CH TO263-3 | ||
Infineon Technologies |
IPB80P04P4L04ATMA1 | MOSFET P-CHANNEL | |
| IPB80P04P405XT | Trans MOSFET P-CH 40V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80P04P405ATMA1) | ||
| IPB80P04P4L-04 | P- CHANNEL AUTOMOTIVE MOSF (Alt: IPB80P04P4L-04) | ||
| IPB80P04P4-05 | IGBT Transistors MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 |