PartNumber | IPD135N08N3GATMA1 | IPD13N03LA G | IPD135N08N3GBTMA1 |
Description | MOSFET MV POWER MOS | MOSFET N-Ch 25V 30A DPAK-2 | MOSFET N-CH 80V 45A TO252-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 80 V | 25 V | - |
Configuration | Single | Single | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Series | OptiMOS 3 | - | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | G IPD135N08N3 SP001127822 | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Id Continuous Drain Current | - | 30 A | - |
Rds On Drain Source Resistance | - | 21.9 mOhms | - |
Vgs Gate Source Voltage | - | 20 V | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 46 W | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Forward Transconductance Min | - | 36 S / 18 S | - |
Fall Time | - | 2.6 ns | - |
Moisture Sensitive | - | Yes | - |
Rise Time | - | 4.6 ns | - |
Typical Turn Off Delay Time | - | 15 ns | - |
Typical Turn On Delay Time | - | 5.4 ns | - |