IPD15N06S2L64ATMA2

Mfr. #:: IPD15N06S2L64ATMA2
Manufacturer:: Infineon Technologies
Description:: MOSFET N-CHANNEL_55/60V
Lifecycle:: New from this manufacturer.
Datasheet:: IPD15N06S2L64ATMA2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IPD15N06S2L64ATMA2 Datasheet IPD15N06S2L64ATMA2 Datasheet (P4-P6)IPD15N06S2L64ATMA2 Datasheet (P7-P8)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 55 V

Id - Continuous Drain Current:: 19 A

Rds On - Drain-Source Resistance:: 47 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 13 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 47 W

Configuration:: Single

Channel Mode:: Enhancement

Qualification:: AEC-Q101

Packaging:: Reel

Height:: 2.3 mm

Length:: 6.5 mm

Transistor Type:: 1 N-Channel

Width:: 6.22 mm

Brand:: Infineon Technologies

Fall Time:: 12 ns

Product Type:: MOSFET

Rise Time:: 14 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 21 ns

Typical Turn-On Delay Time:: 4 ns

Part # Aliases:: IPD15N06S2L-64 SP001063644

Unit Weight:: 0.139332 oz

Tags: IPD15N06S2L64A, IPD15N06S2L6, IPD15N06S, IPD15N06, IPD15, IPD1, IPD

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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IPD15N06S2L64ATMA2 Description

***ure Electronics: N-Channel 55 V 64 mOhm 13 nC OptiMOS Enhancement Mode Power-Transistor-TO-252

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:19A; On Resistance Rds(On):0.047Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Market price

Part #	Mfg.	Description	Stock	Price
IPD15N06S2L64ATMA2 DISTI # V72:2272_06391057	Infineon Technologies AG	Trans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R	72	25:$0.5023 10:$0.6139 1:$0.7377
IPD15N06S2L64ATMA2 DISTI # V36:1790_06391057	Infineon Technologies AG	Trans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R	0	2500:$0.2599
IPD15N06S2L64ATMA2 DISTI # IPD15N06S2L64ATMA2CT-ND	Infineon Technologies AG	N-CHANNEL_55/60V RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3245In Stock	1000:$0.3148 500:$0.3935 100:$0.4977 10:$0.6490 1:$0.7400
IPD15N06S2L64ATMA2 DISTI # IPD15N06S2L64ATMA2DKR-ND	Infineon Technologies AG	N-CHANNEL_55/60V RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3245In Stock	1000:$0.3148 500:$0.3935 100:$0.4977 10:$0.6490 1:$0.7400
IPD15N06S2L64ATMA2 DISTI # IPD15N06S2L64ATMA2TR-ND	Infineon Technologies AG	N-CHANNEL_55/60V RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	25000:$0.2419 12500:$0.2483 5000:$0.2578 2500:$0.2769
IPD15N06S2L64ATMA2 DISTI # 33919527	Infineon Technologies AG	Trans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R	2500	2500:$0.4594
IPD15N06S2L64ATMA2 DISTI # 26195738	Infineon Technologies AG	Trans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R	72	28:$0.7377
IPD15N06S2L64ATMA2 DISTI # IPD15N06S2L64ATMA2	Infineon Technologies AG	N-KANAL POWER MOS - Bulk (Alt: IPD15N06S2L64ATMA2) RoHS: Compliant Min Qty: 1471 Container: Bulk	Americas - 0	14710:$0.2159 7355:$0.2189 4413:$0.2269 2942:$0.2359 1471:$0.2439
IPD15N06S2L64ATMA2 DISTI # IPD15N06S2L64ATMA2	Infineon Technologies AG	N-KANAL POWER MOS - Tape and Reel (Alt: IPD15N06S2L64ATMA2) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2829 15000:$0.2879 10000:$0.2979 5000:$0.3089 2500:$0.3209
IPD15N06S2L64ATMA2 DISTI # SP001063644	Infineon Technologies AG	N-KANAL POWER MOS (Alt: SP001063644) RoHS: Compliant Min Qty: 2500	Europe - 0	25000:€0.2699 15000:€0.2909 10000:€0.3159 5000:€0.3439 2500:€0.4209
IPD15N06S2L64ATMA2 DISTI # 12AC9707	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes	15	1000:$0.2950 500:$0.3190 250:$0.3430 100:$0.3680 50:$0.4350 25:$0.5020 10:$0.5700 1:$0.6870
IPD15N06S2L64ATMA2. DISTI # 27AC6730	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power Dissipation Pd:47W,No. of Pins:3Pins RoHS Compliant: Yes	0	25000:$0.2310 15000:$0.2350 10000:$0.2430 5000:$0.2520 1:$0.2620
IPD15N06S2L64ATMA2 DISTI # 726-IPD15N06S2L64AT	Infineon Technologies AG	MOSFET N-CHANNEL_55/60V RoHS: Compliant	7129	1:$0.6800 10:$0.5640 100:$0.3640 1000:$0.2920 2500:$0.2460
IPD15N06S2L64ATMA2	Infineon Technologies AG	N-Channel 55 V 64 mOhm 13 nC OptiMOS Enhancement Mode Power-Transistor-TO-252 RoHS: Not Compliant	2500Reel	2500:$0.2800
IPD15N06S2L64ATMA2	Infineon Technologies AG	Power Field-Effect Transistor, 19A I(D), 55V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	39828	1000:$0.2200 500:$0.2400 100:$0.2500 25:$0.2600 1:$0.2800
IPD15N06S2L64ATMA2 DISTI # 2709988	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-252	2515	500:£0.2180 250:£0.2480 100:£0.2780 10:£0.4770 1:£0.5940
IPD15N06S2L64ATMA2 DISTI # XSFP00000116981	Infineon Technologies AG	N-Channel 55 V 64 mOhm 13 nC OptiMOSEnhancementMode Power-Transistor-TO-252 RoHS: Compliant	5000 in Stock0 on Order	5000:$0.3733 2500:$0.4000
IPD15N06S2L64ATMA2 DISTI # 2709988	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-252 RoHS: Compliant	2510	1000:$0.4750 500:$0.5930 100:$0.7500 10:$0.9780 1:$1.1200

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Availability

Stock:: Available
On Order:: 1986
Enter Quantity:

Current price of IPD15N06S2L64ATMA2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.68~~; ~~$0.68~~

10: ~~$0.56~~; ~~$5.64~~

100: ~~$0.36~~; ~~$36.40~~

1000: ~~$0.29~~; ~~$292.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPD15N06S2L64ATMA2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes