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| PartNumber | IPD048N06L3 G | IPD048N06L3GBTMA1 | IPD048N06L3G |
| Description | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3 | MOSFET N-CH 60V 90A TO252-3 | 60V,4.8m��,90A,N-Channel Power MOSFET |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 90 A | - | - |
| Rds On Drain Source Resistance | 4.8 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 50 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 115 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 125 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 56 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Part # Aliases | IPD048N06L3GBTMA1 IPD48N6L3GXT SP000453334 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD048N06L3 G | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3 | |
| IPD048N06L3GBTMA1 | MOSFET N-CH 60V 90A TO252-3 | ||
| IPD048N06L3 G | Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R | ||
| IPD048N06L3G | 60V,4.8m��,90A,N-Channel Power MOSFET |