IPD10N03L

IPD10N03L vs IPD10N03LA vs IPD10N03LA G

 
PartNumberIPD10N03LIPD10N03LAIPD10N03LA G
DescriptionMOSFET N-CH 25V 30A DPAKMOSFET N-CH 25V 30A DPAK
ManufacturerINFINEON--
Product CategoryFETs - Single--
SeriesOptiMOS--
PackagingTape & Reel (TR)--
Part StatusObsolete--
FET TypeN-Channel--
TechnologyMOSFET (Metal Oxide)--
Drain to Source Voltage (Vdss)25V--
Current Continuous Drain (Id) @ 25°C30A (Tc)--
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V--
Vgs(th) (Max) @ Id2V @ 20A--
Gate Charge (Qg) (Max) @ Vgs11nC @ 5V--
Vgs (Max)±20V--
Input Capacitance (Ciss) (Max) @ Vds1358pF @ 15V--
FET Feature---
Power Dissipation (Max)52W (Tc)--
Rds On (Max) @ Id, Vgs10.4 mOhm @ 30A, 10V--
Operating Temperature-55°C ~ 175°C (TJ)--
Mounting TypeSurface Mount--
Supplier Device PackagePG-TO252-3--
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63--
Manufacturer Part # Description RFQ
IPD10N03L New and Original
IPD10N03LAG MOSFET N-Ch 25V 30A DPAK-2
Infineon Technologies
Infineon Technologies
IPD10N03LA MOSFET N-CH 25V 30A DPAK
IPD10N03LA G MOSFET N-CH 25V 30A DPAK
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