IPD135N03LG

IPD135N03LGATMA1 vs IPD135N03LGBTMA1 vs IPD135N03LGXT

 
PartNumberIPD135N03LGATMA1IPD135N03LGBTMA1IPD135N03LGXT
DescriptionMOSFET N-Ch 30V 30A DPAK-2MOSFET LV POWER MOSMOSFET N-CH 30V 30A TO252-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance13.5 mOhms--
ConfigurationSingle--
TradenameOptiMOS--
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity2500--
SubcategoryMOSFETsMOSFETs-
Part # AliasesG IPD135N03L IPD135N3LGXT SP000796912IPD135N3LGXT SP000236951-
Unit Weight0.139332 oz0.139332 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD135N03LGATMA1 MOSFET N-Ch 30V 30A DPAK-2
IPD135N03LGBTMA1 LV POWER MOS
IPD135N03LGATMA1 MOSFET N-CH 30V 30A TO252-3
IPD135N03LGXT MOSFET N-CH 30V 30A TO252-3
Infineon Technologies
Infineon Technologies
IPD135N03LGBTMA1 MOSFET LV POWER MOS
IPD135N03LG Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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