PartNumber | IPD30N08S2-22 | IPD30N06S4L23ATMA2 | IPD30N06S4L23ATMA1 |
Description | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | MOSFET MOSFET | MOSFET N-CH 60V 30A TO252-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 75 V | - | - |
Id Continuous Drain Current | 30 A | - | - |
Rds On Drain Source Resistance | 17.4 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 57 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 136 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 20 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 30 ns | - | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 33 ns | - | - |
Typical Turn On Delay Time | 13 ns | - | - |
Part # Aliases | IPD30N08S222ATMA1 IPD3N8S222XT SP000252169 | IPD30N06S4L-23 IPD3N6S4L23XT SP001028638 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Series | - | IPD30N06 | - |