IPD30N10S3L-34

IPD30N10S3L-34
Mfr. #:
IPD30N10S3L-34
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
Lifecycle:
New from this manufacturer.
Datasheet:
IPD30N10S3L-34 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPD30N10S3L-34 more Information
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
FETs - Single
Series
OptiMOS
Packaging
Digi-ReelR Alternate Packaging
Part-Aliases
IPD30N10S3L34ATMA1 IPD30N10S3L34XT SP000261248
Unit-Weight
0.139332 oz
Mounting-Style
SMD/SMT
Tradename
OptiMOS
Package-Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology
Si
Operating-Temperature
-55°C ~ 175°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
1 Channel
Supplier-Device-Package
PG-TO252-3
Configuration
Single
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
57W
Transistor-Type
1 N-Channel
Drain-to-Source-Voltage-Vdss
100V
Input-Capacitance-Ciss-Vds
1976pF @ 25V
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
30A (Tc)
Rds-On-Max-Id-Vgs
31 mOhm @ 30A, 10V
Vgs-th-Max-Id
2.4V @ 29μA
Gate-Charge-Qg-Vgs
31nC @ 10V
Pd-Power-Dissipation
57 W
Maximum-Operating-Temperature
+ 175 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
3 ns
Rise-Time
4 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
30 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Resistance
31 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
18 ns
Typical-Turn-On-Delay-Time
6 ns
Channel-Mode
Enhancement
Tags
IPD30N10S3L-3, IPD30N10, IPD30N1, IPD30N, IPD30, IPD3, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Part # Mfg. Description Stock Price
IPD30N10S3L34ATMA1
DISTI # V72:2272_06390917
Infineon Technologies AGTrans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
11
  • 2501:$0.3198
  • 75000:$0.3419
  • 30000:$0.3420
  • 15000:$0.3421
  • 6000:$0.3422
  • 3000:$0.3423
  • 1:$0.3485
  • 1000:$0.3798
  • 500:$0.4838
  • 250:$0.5209
  • 100:$0.5461
  • 50:$0.6014
  • 25:$0.6683
  • 10:$0.6937
IPD30N10S3L34ATMA1
DISTI # IPD30N10S3L34ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
13997In Stock
  • 1000:$0.4551
  • 500:$0.5765
  • 100:$0.7434
  • 10:$0.9410
  • 1:$1.0600
IPD30N10S3L34ATMA1
DISTI # IPD30N10S3L34ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
13997In Stock
  • 1000:$0.4551
  • 500:$0.5765
  • 100:$0.7434
  • 10:$0.9410
  • 1:$1.0600
IPD30N10S3L34ATMA1
DISTI # IPD30N10S3L34ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 30A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
12500In Stock
  • 2500:$0.4124
IPD30N10S3L34ATMA1
DISTI # 19522544
Infineon Technologies AGTrans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2500
  • 2500:$0.3314
IPD30N10S3L-34
DISTI # IPD30N10S3L-34
Infineon Technologies AGTrans MOSFET N-CH 100V 30A 3-Pin TO-252 T/R (Alt: IPD30N10S3L-34)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
  • 2500:$0.3657
  • 5000:$0.3556
  • 7500:$0.3459
  • 12500:$0.3368
  • 25000:$0.3325
  • 62500:$0.3282
  • 125000:$0.3241
IPD30N10S3L34ATMA1
DISTI # IPD30N10S3L34ATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD30N10S3L34ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.3849
  • 2502:$0.3709
  • 5002:$0.3579
  • 12500:$0.3459
  • 25000:$0.3399
IPD30N10S3L34ATMA1
DISTI # SP000261248
Infineon Technologies AGTrans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-252 (Alt: SP000261248)
RoHS: Compliant
Min Qty: 2500
Europe - 0
  • 2500:€0.5719
  • 5000:€0.4849
  • 10000:€0.4319
  • 15000:€0.3889
  • 25000:€0.3609
IPD30N10S3L34ATMA1
DISTI # 79X1436
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-252- 3,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0258ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes0
  • 1000:$0.4020
  • 500:$0.5090
  • 250:$0.5430
  • 100:$0.5760
  • 50:$0.6340
  • 25:$0.6920
  • 10:$0.7500
  • 1:$0.8800
IPD30N10S3L34ATMA1
DISTI # 726-IPD30N10S3L34ATM
Infineon Technologies AGMOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
RoHS: Compliant
374
  • 1:$0.8800
  • 10:$0.7500
  • 100:$0.5760
  • 500:$0.5090
  • 1000:$0.4020
  • 2500:$0.3570
IPD30N10S3L-34
DISTI # 726-IPD30N10S3L34
Infineon Technologies AGMOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
RoHS: Compliant
0
  • 1:$0.8800
  • 10:$0.7500
  • 100:$0.5760
  • 500:$0.5090
  • 1000:$0.4020
  • 2500:$0.3570
IPD30N10S3L34ATMA1
DISTI # 7533018
Infineon Technologies AGMOSFET N-CH 100V 30A OPTIMOS-T TO252, PK180
  • 10:£0.6120
  • 30:£0.4690
  • 130:£0.3680
  • 630:£0.3220
  • 1250:£0.2850
IPD30N10S3L34ATMA1
DISTI # 7533018P
Infineon Technologies AGMOSFET N-CH 100V 30A OPTIMOS-T TO252, RL1050
  • 30:£0.4690
  • 130:£0.3680
  • 630:£0.3220
  • 1250:£0.2850
IPD30N10S3L-34Infineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 30A I(D), 100V, 0.0418OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AB50
    IPD30N10S3L-34
    DISTI # TMOSP9762
    Infineon Technologies AGN-CH 100V30A31mOhm TO252-3
    RoHS: Compliant
    Stock DE - 0Stock US - 0
    • 2500:$0.5487
    • 5000:$0.5173
    • 7500:$0.4860
    • 10000:$0.4390
    • 15000:$0.4233
    IPD30N10S3L34ATMA1
    DISTI # 2432729
    Infineon Technologies AGMOSFET, N CH, 100V, 30A, TO-252-3
    RoHS: Compliant
    0
    • 500:£0.3250
    • 250:£0.3490
    • 100:£0.3720
    • 25:£0.4740
    • 5:£0.6180
    IPD30N10S3L34ATMA1
    DISTI # 2432729RL
    Infineon Technologies AGMOSFET, N CH, 100V, 30A, TO-252-3
    RoHS: Compliant
    0
    • 2500:$0.5650
    • 1000:$0.6370
    • 500:$0.8060
    • 100:$0.9120
    • 10:$1.1900
    • 1:$1.4000
    IPD30N10S3L34ATMA1
    DISTI # 2432729
    Infineon Technologies AGMOSFET, N CH, 100V, 30A, TO-252-3
    RoHS: Compliant
    0
    • 2500:$0.5650
    • 1000:$0.6370
    • 500:$0.8060
    • 100:$0.9120
    • 10:$1.1900
    • 1:$1.4000
    Image Part # Description
    IPD30N12S3L31ATMA1

    Mfr.#: IPD30N12S3L31ATMA1

    OMO.#: OMO-IPD30N12S3L31ATMA1

    MOSFET N-CHANNEL 100+
    IPD30N10S3L-34

    Mfr.#: IPD30N10S3L-34

    OMO.#: OMO-IPD30N10S3L-34

    MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
    IPD30N10S3L34ATMA1

    Mfr.#: IPD30N10S3L34ATMA1

    OMO.#: OMO-IPD30N10S3L34ATMA1

    MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
    IPD30N10S3L34ATMA1

    Mfr.#: IPD30N10S3L34ATMA1

    OMO.#: OMO-IPD30N10S3L34ATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 100V 30A TO252-3
    IPD30N12S3L31ATMA1

    Mfr.#: IPD30N12S3L31ATMA1

    OMO.#: OMO-IPD30N12S3L31ATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CHANNEL_100+
    IPD30N10S3L34ATMA1-CUT TAPE

    Mfr.#: IPD30N10S3L34ATMA1-CUT TAPE

    OMO.#: OMO-IPD30N10S3L34ATMA1-CUT-TAPE-1190

    New and Original
    IPD30N10S3L-34 , 2SD2153

    Mfr.#: IPD30N10S3L-34 , 2SD2153

    OMO.#: OMO-IPD30N10S3L-34-2SD2153-1190

    New and Original
    IPD30N10S3L-34(3N10L34)

    Mfr.#: IPD30N10S3L-34(3N10L34)

    OMO.#: OMO-IPD30N10S3L-34-3N10L34--1190

    New and Original
    IPD30N10S3L-34

    Mfr.#: IPD30N10S3L-34

    OMO.#: OMO-IPD30N10S3L-34-126

    IGBT Transistors MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
    Availability
    Stock:
    Available
    On Order:
    2000
    Enter Quantity:
    Current price of IPD30N10S3L-34 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.51
    $0.51
    10
    $0.49
    $4.89
    100
    $0.46
    $46.31
    500
    $0.44
    $218.65
    1000
    $0.41
    $411.60
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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