 | | | |
| PartNumber | IPD30N12S3L31ATMA1 | IPD30N10S3L-34 | IPD30N10S3L34ATMA1 |
| Description | MOSFET N-CHANNEL 100+ | MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T | MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | PG-TO-252-3 |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | IPD30N12S3L-31 SP001398654 | IPD30N10S3L34ATMA1 IPD3N1S3L34XT SP000261248 | IPD30N10S3L-34 IPD3N1S3L34XT SP000261248 |
| Unit Weight | 0.011993 oz | 0.139332 oz | 0.139332 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 100 V | 100 V |
| Id Continuous Drain Current | - | 30 A | 30 A |
| Rds On Drain Source Resistance | - | 25.8 mOhms | 31 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | - | 20 V | 10 V |
| Qg Gate Charge | - | 31 nC | 24 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Pd Power Dissipation | - | 57 W | 57 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Tradename | - | OptiMOS | - |
| Series | - | OptiMOS-T | XPD30N10 |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 3 ns | 3 ns |
| Rise Time | - | 4 ns | 4 ns |
| Typical Turn Off Delay Time | - | 18 ns | 18 ns |
| Typical Turn On Delay Time | - | 6 ns | 6 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD30N12S3L31ATMA1 | MOSFET N-CHANNEL 100+ | |
| IPD30N10S3L-34 | MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T | ||
| IPD30N10S3L34ATMA1 | MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T | ||
| IPD30N10S3L34ATMA1 | MOSFET N-CH 100V 30A TO252-3 | ||
| IPD30N12S3L31ATMA1 | MOSFET N-CHANNEL_100+ | ||
| IPD30N10S3L34ATMA1-CUT TAPE | New and Original | ||
| IPD30N10S3L-34 , 2SD2153 | New and Original | ||
| IPD30N10S3L-34(3N10L34) | New and Original | ||
| IPD30N10S3L-34 | IGBT Transistors MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T |