PartNumber | IPD30N10S3L-34 | IPD30N10S3L-34 , 2SD2153 | IPD30N10S3L-34(3N10L34) |
Description | MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T | ||
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 30 A | - | - |
Rds On Drain Source Resistance | 25.8 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 31 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 57 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | - | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | - | - |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Series | OptiMOS-T | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Fall Time | 3 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 4 ns | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 18 ns | - | - |
Typical Turn On Delay Time | 6 ns | - | - |
Part # Aliases | IPD30N10S3L34ATMA1 IPD3N1S3L34XT SP000261248 | - | - |
Unit Weight | 0.139332 oz | - | - |