PartNumber | IPD30N06S2L23ATMA3 | IPD30N06S2L23ATMA1 |
Description | MOSFET N-CHANNEL_55/60V | MOSFET N-Ch 55V 30A DPAK-2 OptiMOS |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 55 V | 55 V |
Id Continuous Drain Current | 30 A | 30 A |
Rds On Drain Source Resistance | 15.9 mOhms | 15.9 mOhms |
Vgs th Gate Source Threshold Voltage | 1.6 V | 1.2 V |
Vgs Gate Source Voltage | 20 V | 20 V |
Qg Gate Charge | 33 nC | 42 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C |
Pd Power Dissipation | 100 W | 100 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Qualification | AEC-Q101 | - |
Packaging | Reel | Reel |
Height | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | - | - |
Fall Time | 9 ns | 9 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 22 ns | 22 ns |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 33 ns | 33 ns |
Typical Turn On Delay Time | 7 ns | 7 ns |
Part # Aliases | IPD30N06S2L-23 SP001061286 | IPD30N06S2L-23 IPD30N06S2L23XT SP000252168 |
Unit Weight | 0.139332 oz | 0.011993 oz |