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| PartNumber | IPD30N06S2L23ATMA3 | IPD30N06S2L23ATMA1 |
| Description | MOSFET N-CHANNEL_55/60V | MOSFET N-Ch 55V 30A DPAK-2 OptiMOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V |
| Id Continuous Drain Current | 30 A | 30 A |
| Rds On Drain Source Resistance | 15.9 mOhms | 15.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.6 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 33 nC | 42 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 100 W | 100 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | - | - |
| Fall Time | 9 ns | 9 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 22 ns | 22 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 33 ns | 33 ns |
| Typical Turn On Delay Time | 7 ns | 7 ns |
| Part # Aliases | IPD30N06S2L-23 SP001061286 | IPD30N06S2L-23 IPD30N06S2L23XT SP000252168 |
| Unit Weight | 0.139332 oz | 0.011993 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD30N06S2L23ATMA3 | MOSFET N-CHANNEL_55/60V | |
| IPD30N06S2L23ATMA3 | MOSFET N-CH 55V 30A TO252-3 | ||
| IPD30N06S2L23ATMA1 | MOSFET N-CH 55V 30A TO252-3 | ||
Infineon Technologies |
IPD30N06S2L23ATMA1 | MOSFET N-Ch 55V 30A DPAK-2 OptiMOS | |
| IPD30N06S2L23ATMA2 | MOSFET |