 |  | | |
| PartNumber | IPD35N10S3L-26 | IPD35N10S3L-26 3N10L26 | IPD35N10S3L-26(3N10L26) |
| Description | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PG-TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 35 A | - | - |
| Rds On Drain Source Resistance | 24 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 30 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 71 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | OptiMOS-T | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 18 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Part # Aliases | IPD35N10S3L26ATMA1 IPD35N1S3L26XT SP000386184 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD35N10S3L-26 | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | |
| IPD35N10S3L26ATMA1 | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | ||
| IPD35N10S3L26ATMA1 | MOSFET N-CH 100V 35A TO252-3 | ||
| IPD35N10S3L26ATMA1-CUT TAPE | New and Original | ||
| IPD35N10S3L26XT | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD35N10S3L26ATMA1) | ||
| IPD35N10S3L26 | New and Original | ||
| IPD35N10S3L-26 3N10L26 | New and Original | ||
| IPD35N10S3L-26(3N10L26) | New and Original | ||
| IPD35N10S3L-26 | IGBT Transistors MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T |