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IPD35N10S3L26ATMA1

IPD35N10S3L26ATMA1
Mfr. #:
IPD35N10S3L26ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T
Lifecycle:
New from this manufacturer.
Datasheet:
IPD35N10S3L26ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD35N10S3L26ATMA1 DatasheetIPD35N10S3L26ATMA1 Datasheet (P4-P6)IPD35N10S3L26ATMA1 Datasheet (P7-P9)
ECAD Model:
More Information:
IPD35N10S3L26ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
35 A
Rds On - Drain-Source Resistance:
20 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
39 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
71 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
XPD35N10
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
3 ns
Product Type:
MOSFET
Rise Time:
4 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
18 ns
Typical Turn-On Delay Time:
6 ns
Part # Aliases:
IPD35N10S3L-26 IPD35N1S3L26XT SP000386184
Unit Weight:
0.139332 oz
Tags
IPD35N10S3L2, IPD35N10, IPD35N, IPD35, IPD3, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Part # Mfg. Description Stock Price
IPD35N10S3L26ATMA1
DISTI # V72:2272_06384825		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2615
  • 1000:$0.4414
  • 500:$0.5744
  • 250:$0.5904
  • 100:$0.6560
  • 25:$0.7655
  • 10:$0.9357
  • 1:$1.0896
IPD35N10S3L26ATMA1
DISTI # IPD35N10S3L26ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 35A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4741In Stock
  • 1000:$0.5196
  • 500:$0.6582
  • 100:$0.7967
  • 10:$1.0220
  • 1:$1.1400
IPD35N10S3L26ATMA1
DISTI # IPD35N10S3L26ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 35A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4741In Stock
  • 1000:$0.5196
  • 500:$0.6582
  • 100:$0.7967
  • 10:$1.0220
  • 1:$1.1400
IPD35N10S3L26ATMA1
DISTI # IPD35N10S3L26ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 35A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 12500:$0.4305
  • 5000:$0.4473
  • 2500:$0.4708
IPD35N10S3L26ATMA1
DISTI # 33919352		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		5000
  • 2500:$0.4077
IPD35N10S3L26ATMA1
DISTI # 31084173		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2615
  • 15:$1.0896
IPD35N10S3L26ATMA1
DISTI # 31941685		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 2500:$0.6562
IPD35N10S3L26XT
DISTI # IPD35N10S3L26ATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD35N10S3L26ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.4059
  • 15000:$0.4139
  • 10000:$0.4279
  • 5000:$0.4439
  • 2500:$0.4609
IPD35N10S3L-26
DISTI # IPD35N10S3L26ATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin TO-252 T/R - Bulk (Alt: IPD35N10S3L26ATMA1)
RoHS: Compliant
Min Qty: 926
Container: Bulk		Americas - 0
    IPD35N10S3L26ATMA1
    DISTI # 50Y2034    		Infineon Technologies AGMOSFET Transistor, N Channel, 35 A, 100 V, 0.02 ohm, 10 V, 1.7 V RoHS Compliant: Yes803
    • 1000:$0.4650
    • 500:$0.5880
    • 250:$0.6270
    • 100:$0.6660
    • 50:$0.7320
    • 25:$0.7990
    • 10:$0.8660
    • 1:$1.0100
    IPD35N10S3L-26
    DISTI # 726-IPD35N10S3L26    		Infineon Technologies AGMOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T
    RoHS: Compliant    		14540
    • 1:$1.0000
    • 10:$0.8570
    • 100:$0.6590
    • 500:$0.5820
    • 1000:$0.4600
    • 2500:$0.4080
    • 10000:$0.3920
    IPD35N10S3L26ATMA1
    DISTI # 726-IPD35N10S3L26ATM    		Infineon Technologies AGMOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T
    RoHS: Compliant    		5855
    • 1:$1.0000
    • 10:$0.8570
    • 100:$0.6590
    • 500:$0.5820
    • 1000:$0.4600
    • 2500:$0.4080
    • 10000:$0.3920
    IPD35N10S3L26ATMA1Infineon Technologies AGSingle N-Channel 100 V 24 mOhm 30 nC OptiMOS Power Mosfet - TO-252-3-11
    RoHS: Not Compliant    		2500Reel
    • 2500:$0.4000
    IPD35N10S3L26ATMA1Infineon Technologies AG 
    RoHS: Not Compliant    		29468
    • 1000:$0.3600
    • 500:$0.3700
    • 100:$0.3900
    • 25:$0.4100
    • 1:$0.4400
    IPD35N10S3L26ATMA1
    DISTI # 2480829RL    		Infineon Technologies AGMOSFET, N-CH, 100V,35A, TO-252
    RoHS: Compliant    		0
    • 1000:$0.6930
    • 500:$0.8770
    • 100:$0.9930
    • 10:$1.2900
    • 1:$1.5100
    IPD35N10S3L26ATMA1
    DISTI # 2480829    		Infineon Technologies AGMOSFET, N-CH, 100V,35A, TO-252
    RoHS: Compliant    		803
    • 1000:$0.6930
    • 500:$0.8770
    • 100:$0.9930
    • 10:$1.2900
    • 1:$1.5100
    IPD35N10S3L26ATMA1
    DISTI # 2480829    		Infineon Technologies AGMOSFET, N-CH, 100V,35A, TO-2521568
    • 500:£0.4530
    • 250:£0.4830
    • 100:£0.5130
    • 10:£0.7240
    • 1:£0.8880
    IPD35N10S3L26ATMA1
    DISTI # XSFP00000147614    		Infineon Technologies AGPowerField-EffectTransistor,2.5AI(D),200V,0.17ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,MS-012AA
    RoHS: Compliant    		5000 in Stock0 on Order
    • 5000:$0.5333
    • 2500:$0.5714
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    Availability
    Stock:
    Available
    On Order:
    1988
    Enter Quantity:
    Current price of IPD35N10S3L26ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.05
    $1.05
    10
    $0.90
    $8.96
    100
    $0.69
    $68.80
    500
    $0.61
    $304.00
    1000
    $0.48
    $480.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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