PartNumber | IPD60N10S4L-12 | IPD60N10S4L12ATMA1 | IPD60N10S412ATMA1 |
Description | MOSFET N-Ch 100V 60A DPAK-2 | MOSFET N-Ch 100V 60A DPAK-2 | MOSFET N-CHANNEL 100+ |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
Id Continuous Drain Current | 60 A | 60 A | - |
Rds On Drain Source Resistance | 9.8 mOhms | 9.8 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.1 V | 1.1 V | - |
Vgs Gate Source Voltage | 16 V | 16 V | - |
Qg Gate Charge | 49 nC | 49 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 94 W | 94 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm | 6.5 mm |
Series | XPD60N10 | IPD60N10 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 21 ns | 21 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 3 ns | 3 ns | - |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 20 ns | 20 ns | - |
Typical Turn On Delay Time | 4 ns | 4 ns | - |
Part # Aliases | IPD60N10S4L12ATMA1 IPD6N1S4L12XT SP000866550 | IPD60N10S4L-12 IPD6N1S4L12XT SP000866550 | IPD60N10S4-12 SP001102936 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |