 |  | | |
| PartNumber | IPD60R180C7ATMA1 | IPD60R180C7 | IPD60R180C7 60C7180 |
| Description | MOSFET HIGH POWER_NEW | SP001277630_COOL MOSPG-TO252-3-341_600V_ (Alt: IPD60R180C7) | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 13 A | - | - |
| Rds On Drain Source Resistance | 180 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 24 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 68 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | CoolMOS C7 | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 50 ns | - | - |
| Typical Turn On Delay Time | 9.3 ns | - | - |
| Part # Aliases | IPD60R180C7 SP001277630 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD60R180C7ATMA1 | MOSFET HIGH POWER_NEW | |
| IPD60R180C7ATMA1 | MOSFET N-CH TO252-3 | ||
| IPD60R180C7 | SP001277630_COOL MOSPG-TO252-3-341_600V_ (Alt: IPD60R180C7) | ||
| IPD60R180C7 60C7180 | New and Original |