PartNumber | IPD60R1K0CEAUMA1 | IPD60R1K0CEATMA1 |
Description | MOSFET CONSUMER | MOSFET N-Ch 600V 4.3A DPAK-2 |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | PG-TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V |
Id Continuous Drain Current | 6.8 A | 4.3 A |
Rds On Drain Source Resistance | 1 Ohms | 1 Ohms |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V |
Vgs Gate Source Voltage | 10 V | 20 V |
Qg Gate Charge | 13 nC | 13 nC |
Minimum Operating Temperature | - 40 C | - 40 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 61 W | 37 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | CoolMOS | CoolMOS |
Packaging | Reel | Reel |
Height | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm |
Series | CoolMOS CE | - |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies |
Fall Time | 13 ns | 13 ns |
Moisture Sensitive | Yes | - |
Product Type | MOSFET | MOSFET |
Rise Time | 8 ns | 8 ns |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 60 ns | 60 ns |
Typical Turn On Delay Time | 10 ns | 10 ns |
Part # Aliases | IPD60R1K0CE SP001396896 | IPD60R1K0CEATMA1 SP001276032 |
Unit Weight | 0.139332 oz | 0.139332 oz |