IPD60R8

IPD60R800CEAUMA1 vs IPD60R800CEATMA1 vs IPD60R800CE

 
PartNumberIPD60R800CEAUMA1IPD60R800CEATMA1IPD60R800CE
DescriptionMOSFET CONSUMERMOSFET N-CH 600V TO-252-3600V,800m��,8.4A,N-Channel Power MOSFET
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Vds Drain Source Breakdown Voltage600 V--
TradenameCoolMOSCoolMOS-
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
SeriesCoolMOS CE--
Width6.22 mm--
BrandInfineon Technologies--
Moisture SensitiveYes--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesIPD60R800CE SP001396890--
Unit Weight0.011993 oz0.139332 oz-
Part Aliases-IPD60R800CE SP001276028-
Package Case-TO-252-3-
Number of Channels-1 Channel-
Configuration-Single-
Transistor Type-1 N-Channel-
Pd Power Dissipation-48 W-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 40 C-
Fall Time-12 ns-
Rise Time-7 ns-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-5.6 A-
Vds Drain Source Breakdown Voltage-600 V-
Vgs th Gate Source Threshold Voltage-2.5 V-
Rds On Drain Source Resistance-800 mOhms-
Transistor Polarity-N-Channel-
Typical Turn Off Delay Time-50 ns-
Typical Turn On Delay Time-9 ns-
Qg Gate Charge-17.2 nC-
Channel Mode-Enhancement-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD60R800CEAUMA1 MOSFET CONSUMER
Infineon Technologies
Infineon Technologies
IPD60R800CEATMA1 MOSFET N-CH 600V TO-252-3
IPD60R800CEAUMA1 Trans MOSFET N-CH 600V 8.4A 3-Pin(2+Tab) DPAK T/R
IPD60R800CE 600V,800m��,8.4A,N-Channel Power MOSFET
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