 |  |  | |
| PartNumber | IPD80R2K8CEATMA1 | IPD80R360P7ATMA1 | IPD80R2K8CEBTMA1 |
| Description | MOSFET N-Ch 800V 1.9A DPAK-2 | MOSFET | MOSFET N-Ch 800V 1.9A DPAK-2 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | DPAK-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V | - |
| Id Continuous Drain Current | 1.9 A | 13 A | - |
| Rds On Drain Source Resistance | 2.8 Ohms | 310 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 2.5 V | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Qg Gate Charge | 12 nC | 30 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 42 W | 84 W | - |
| Configuration | Single | Single | Single |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | CoolMOS CE | CoolMOS P7 | XPD80R2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 18 ns | 6 ns | 18 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 15 ns | 6 ns | 15 ns |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 72 ns | 40 ns | 72 ns |
| Typical Turn On Delay Time | 25 ns | 10 ns | 25 ns |
| Part # Aliases | IPD80R2K8CE SP001130970 | IPD80R360P7 SP001633516 | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| RoHS | - | Y | - |
| Channel Mode | - | Enhancement | - |
| Part Aliases | - | - | IPD80R2K8CE SP001100602 |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 42 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 1.9 A |
| Vds Drain Source Breakdown Voltage | - | - | 800 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 2.8 Ohms |
| Qg Gate Charge | - | - | 12 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD80R4K5P7ATMA1 | MOSFET | |
| IPD80R450P7ATMA1 | MOSFET | ||
| IPD80R2K8CEATMA1 | MOSFET N-Ch 800V 1.9A DPAK-2 | ||
| IPD80R3K3P7ATMA1 | MOSFET | ||
| IPD80R750P7ATMA1 | MOSFET | ||
| IPD80R360P7ATMA1 | MOSFET | ||
| IPD80R360P7ATMA1 | MOSFET N-CH 800V 13A TO252-3 | ||
| IPD80R3K3P7ATMA1 | MOSFET N-CH 800V 1.9A TO252-3 | ||
| IPD80R600P7ATMA1 | MOSFET N-CH 800V 8A TO252-3 | ||
| IPD80R750P7ATMA1 | MOSFET N-CH 800V 7A TO252-3 | ||
| IPD80R450P7ATMA1 | MOSFET N-CH 800V 11A DPAK | ||
| IPD80R4K5P7ATMA1 | MOSFET N-CH 800V 1.5A DPAK | ||
| IPD80R900P7ATMA1 | MOSFET N-CH 800V 6A TO252-3 | ||
| IPD80R2K8CEBTMA1 | MOSFET N-Ch 800V 1.9A DPAK-2 | ||
| IPD80R2K8CEATMA1 | MOSFET N-Ch 800V 1.9A DPAK-2 | ||
| IPD80R450P7ATMA1-CUT TAPE | New and Original | ||
| IPD80R4K5P7ATMA1-CUT TAPE | New and Original | ||
| IPD80R600P7ATMA1-CUT TAPE | New and Original | ||
| IPD80R750P7ATMA1-CUT TAPE | New and Original | ||
| IPD80R900P7ATMA1-CUT TAPE | New and Original | ||
| IPD80R2K8CE | Trans MOSFET N-CH 800(Min)V 1.9A 3-Pin TO-252 T/R (Alt: IPD80R2K8CE) | ||
| IPD80R2K8CEBTMA1 , 2SD24 | New and Original | ||
| IPD80R360P7 | New and Original | ||
| IPD80R4K5P7 | New and Original | ||
| IPD80R600P7 | New and Original |