IPD80R4K5P7ATMA1

Mfr. #:: IPD80R4K5P7ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-CH 800V 1.5A DPAK
Lifecycle:: New from this manufacturer.
Datasheet:: IPD80R4K5P7ATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IPD80R4K5P7ATMA1 more Information

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Tags: IPD80R4K, IPD80R4, IPD80R, IPD80, IPD8, IPD

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IPD80R4K5P7ATMA1 Description

***ure Electronics: Single N-Channel 800 V 4.5 Ohm 4 nC CoolMOS Power Mosfet - DPAK

***ark: Mosfet, N-Ch, 800V, 1.5A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:800V; On Resistance Rds(On):3.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes

***ineon: 800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power

IPD80R4K5P7ATMA1 More Information

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

800V CoolMOS P7 MOSFETs: Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

Market price

Part #	Mfg.	Description	Stock	Price
IPD80R4K5P7ATMA1 DISTI # V72:2272_16563311	Infineon Technologies AG	Trans MOSFET N-CH 800V 1.5A 3-Pin(2+Tab) TO-252 T/R	2295	1000:$0.2834 500:$0.3147 250:$0.3497 100:$0.3653 25:$0.5256 10:$0.6312 1:$0.7608
IPD80R4K5P7ATMA1 DISTI # V36:1790_16563311	Infineon Technologies AG	Trans MOSFET N-CH 800V 1.5A 3-Pin(2+Tab) TO-252 T/R	0	2500000:$0.2197 1250000:$0.2200 250000:$0.2421 25000:$0.2807 2500:$0.2871
IPD80R4K5P7ATMA1 DISTI # IPD80R4K5P7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 800V 1.5A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPD80R4K5P7ATMA1 DISTI # IPD80R4K5P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 800V 1.5A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPD80R4K5P7ATMA1 DISTI # IPD80R4K5P7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 800V 1.5A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.2871
IPD80R4K5P7ATMA1 DISTI # 32638869	Infineon Technologies AG	Trans MOSFET N-CH 800V 1.5A 3-Pin(2+Tab) TO-252 T/R	2500	2500:$0.2363
IPD80R4K5P7ATMA1 DISTI # 32004576	Infineon Technologies AG	Trans MOSFET N-CH 800V 1.5A 3-Pin(2+Tab) TO-252 T/R	2295	27:$0.7608
IPD80R4K5P7ATMA1 DISTI # IPD80R4K5P7ATMA1	Infineon Technologies AG	Trans MOSFET N 800V 1.5A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R4K5P7ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2389 15000:$0.2429 10000:$0.2519 5000:$0.2609 2500:$0.2709
IPD80R4K5P7ATMA1 DISTI # SP001422632	Infineon Technologies AG	Trans MOSFET N 800V 1.5A 3-Pin TO-252 T/R (Alt: SP001422632) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.2599 15000:€0.2809 10000:€0.3119 5000:€0.3499 2500:€0.4129
IPD80R4K5P7ATMA1 DISTI # 34AC1690	Infineon Technologies AG	MOSFET, N-CH, 800V, 1.5A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:1.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):3.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes	1789	1000:$0.3050 500:$0.3310 250:$0.3560 100:$0.3820 50:$0.4510 25:$0.5210 10:$0.5910 1:$0.7070
IPD80R4K5P7ATMA1 DISTI # 726-IPD80R4K5P7ATMA1	Infineon Technologies AG	MOSFET RoHS: Compliant	6542	1:$0.7000 10:$0.5850 100:$0.3780 1000:$0.3020
IPD80R4K5P7ATMA1 DISTI # 1300909P	Infineon Technologies AG	MOSFET N-CH 800V 1.5A COOLMOS P7 TO-252, RL	2490	2500:£0.2110 1000:£0.2430 500:£0.2770 50:£0.3380
IPD80R4K5P7ATMA1 DISTI # IPD80R4K5P7	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,800V,1A,13W,PG-TO252-3	4	500:$0.3600 100:$0.3900 25:$0.4300 5:$0.5300 1:$0.6300
IPD80R4K5P7ATMA1 DISTI # 2781178	Infineon Technologies AG	MOSFET, N-CH, 800V, 1.5A, TO-252 RoHS: Compliant	1789	5000:$0.3810 1000:$0.4020 500:$0.4250 250:$0.4910 100:$0.5820 25:$0.7120 5:$0.8190
IPD80R4K5P7ATMA1 DISTI # 2781178	Infineon Technologies AG	MOSFET, N-CH, 800V, 1.5A, TO-252	2009	500:£0.2500 250:£0.2690 100:£0.2880 10:£0.4930 1:£0.6110

Image	Part #	Description
	Mfr.#: IPD80R4K5P7ATMA1 OMO.#: OMO-IPD80R4K5P7ATMA1	MOSFET
	Mfr.#: IPD80R4K5P7ATMA1-CUT TAPE OMO.#: OMO-IPD80R4K5P7ATMA1-CUT-TAPE-1190	New and Original
	Mfr.#: IPD80R4K5P7 OMO.#: OMO-IPD80R4K5P7-1190	New and Original
	Mfr.#: IPD80R4K5P7ATMA1 OMO.#: OMO-IPD80R4K5P7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 800V 1.5A DPAK

IPD80R4K5P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes