PartNumber | IPD90N06S404ATMA2 | IPD90N04S4L04ATMA1 | IPD90N06S404ATMA1 |
Description | MOSFET MOSFET | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | MOSFET N-CHANNEL_55/60V |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Configuration | Single | Single | Single |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm | 6.5 mm |
Series | IPD90N06 | XPD90N04 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | IPD90N06S4-04 IPD9N6S44XT SP001028762 | IPD90N04S4L-04 IPD9N4S4L4XT SP000646188 | IPD90N06S4-04 IPD90N06S404XT SP000374323 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Vds Drain Source Breakdown Voltage | - | 40 V | - |
Id Continuous Drain Current | - | 90 A | - |
Rds On Drain Source Resistance | - | 3.2 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
Vgs Gate Source Voltage | - | 20 V, 16 V | - |
Qg Gate Charge | - | 60 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 71 W | - |
Channel Mode | - | Enhancement | - |
Fall Time | - | 28 ns | - |
Rise Time | - | 11 ns | - |
Typical Turn Off Delay Time | - | 22 ns | - |
Typical Turn On Delay Time | - | 7 ns | - |