 | | | |
| PartNumber | IPD90P04P4-05 | IPD90P03P4L04ATMA1 | IPD90P04P405ATMA1 |
| Description | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | MOSFET P-Ch -30V -90A DPAK-2 OptiMOS-P2 | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | PG-TO-252-3 | PG-TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 30 V | 40 V |
| Id Continuous Drain Current | 90 A | 90 A | 90 A |
| Rds On Drain Source Resistance | 4.7 mOhms | 4.1 mOhms | 4.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 4 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
| Qg Gate Charge | 118 nC | 125 nC | 118 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 125 W | 137 W | 125 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Series | OptiMOS-P2 | XPD90P03 | XPD90P04 |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 14 ns | 40 ns | 14 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8 ns | 11 ns | 8 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 7 ns | 140 ns | 7 ns |
| Typical Turn On Delay Time | 3 ns | 17 ns | 3 ns |
| Part # Aliases | IPD90P04P405ATMA1 IPD9P4P45XT SP000671164 | IPD90P03P4L-04 IPD9P3P4L4XT SP000396300 | IPD90P04P4-05 IPD9P4P45XT SP000671164 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD90R1K2C3ATMA1 | MOSFET N-Ch 900V 5.1A DPAK-2 | |
| IPD90P04P4-05 | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | ||
| IPD90P03P4L04ATMA1 | MOSFET P-Ch -30V -90A DPAK-2 OptiMOS-P2 | ||
| IPD90P04P405ATMA1 | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | ||
| IPD90P04P4L04ATMA1 | MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2 | ||
| IPD90P04P405AUMA1 | MOSFET P-CHANNEL | ||
| IPD90R1K2C3BTMA1 | MOSFET N-CH 900V 5.1A TO-252 | ||
| IPD90P04P405AUMA1 | MOSFET P-CH 40V 90A TO252-3 | ||
| IPD90P03P4L04ATMA1 | MOSFET P-CH 30V 90A TO252-3 | ||
| IPD90P04P4-05 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0047ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| IPD90P04P405ATMA1 | MOSFET P-CH 40V 90A TO252-3 | ||
| IPD90P04P4L04ATMA1 | MOSFET P-CH 40V 90A TO252-3 | ||
| IPD90R1K2C3ATMA1 | MOSFET N-Ch 900V 5.1A DPAK-2 | ||
| IPD90P04P4 | New and Original | ||
| IPD90P04P4-05 4P0405 | New and Original | ||
| IPD90P04P4-05(4P0405) | New and Original | ||
| IPD90P04P4L-04 | Trans MOSFET P-CH 40V 90A 3-Pin(2+Tab) TO-252 | ||
| IPD90P04P4L-04 4P04L04 | New and Original | ||
| IPD90P04P4L-04(4P04L04) | New and Original | ||
| IPD90P04P4L04 | New and Original | ||
| IPD90R1K2C3 | IGBT Transistors MOSFET N-Ch 900V 5.1A DPAK-2 CoolMOS C3 |