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IPD90R1K2C3ATMA1

IPD90R1K2C3ATMA1
Mfr. #:
IPD90R1K2C3ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 900V 5.1A DPAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPD90R1K2C3ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
IPD90R1K2C3ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Series
XPD90R1
Packaging
Reel
Part-Aliases
IPD90R1K2C3 SP001117752
Unit-Weight
0.139332 oz
Mounting-Style
SMD/SMT
Tradename
CoolMOS
Package-Case
TO-252-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
83 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
40 ns
Rise-Time
20 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuous-Drain-Current
5.1 A
Vds-Drain-Source-Breakdown-Voltage
900 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Rds-On-Drain-Source-Resistance
1.2 Ohms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
400 ns
Typical-Turn-On-Delay-Time
70 ns
Qg-Gate-Charge
28 nC
Tags
IPD90R, IPD90, IPD9, IPD
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 900 V 1.2 Ohm 28 nC CoolMOS™ Power Mosfet - TO-252-3
***ical
Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) TO-252 T/R
***ineon SCT
Replacement for CoolMOS™ C3 is CoolMOS™ P7, PG-TO252-3, RoHS
***ineon
900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPD90R1K2C3ATMA1
DISTI # V72:2272_06383545		Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		1186
  • 1000:$0.7117
  • 500:$0.9007
  • 250:$0.9224
  • 100:$1.0249
  • 25:$1.1963
  • 10:$1.3294
  • 1:$1.6989
IPD90R1K2C3ATMA1
DISTI # V36:1790_06383545		Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
    IPD90R1K2C3ATMA1
    DISTI # IPD90R1K2C3ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 900V 5.1A TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		11210In Stock
    • 1000:$0.8078
    • 500:$1.0232
    • 100:$1.2386
    • 10:$1.5890
    • 1:$1.7800
    IPD90R1K2C3ATMA1
    DISTI # IPD90R1K2C3ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 900V 5.1A TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		11210In Stock
    • 1000:$0.8078
    • 500:$1.0232
    • 100:$1.2386
    • 10:$1.5890
    • 1:$1.7800
    IPD90R1K2C3ATMA1
    DISTI # IPD90R1K2C3ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 900V 5.1A TO-252
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		10000In Stock
    • 12500:$0.6692
    • 5000:$0.6954
    • 2500:$0.7320
    IPD90R1K2C3ATMA1
    DISTI # 32415848    		Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		2500
    • 2500:$0.8333
    IPD90R1K2C3ATMA1
    DISTI # 32404249    		Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		1186
    • 1000:$0.7117
    • 500:$0.9007
    • 250:$0.9224
    • 100:$1.0249
    • 25:$1.1963
    • 11:$1.3294
    IPD90R1K2C3ATMA1
    DISTI # IPD90R1K2C3ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD90R1K2C3ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.6029
    • 15000:$0.6139
    • 10000:$0.6359
    • 5000:$0.6599
    • 2500:$0.6839
    IPD90R1K2C3ATMA1
    DISTI # SP001117752    		Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin TO-252 T/R (Alt: SP001117752)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 25000:€0.6589
    • 15000:€0.7029
    • 10000:€0.7729
    • 5000:€0.8649
    • 2500:€1.1089
    IPD90R1K2C3ATMA1
    DISTI # 33P7146    		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 5.1A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:5.1A,Drain Source Voltage Vds:900V,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes1520
    • 1000:$0.7200
    • 500:$0.9130
    • 250:$0.9720
    • 100:$1.0300
    • 50:$1.1300
    • 25:$1.2400
    • 10:$1.3400
    • 1:$1.5800
    IPD90R1K2C3ATMA1Infineon Technologies AGSingle N-Channel 900 V 1.2 Ohm 28 nC CoolMOS Power Mosfet - TO-252-3
    RoHS: Compliant    		2500Reel
    • 2500:$0.5950
    IPD90R1K2C3ATMA1
    DISTI # 726-IPD90R1K2C3ATMA1    		Infineon Technologies AGMOSFET N-Ch 900V 5.1A DPAK-217230
    • 1:$1.5600
    • 10:$1.3300
    • 100:$1.0200
    • 500:$0.9040
    • 1000:$0.7130
    • 2500:$0.6330
    • 10000:$0.6090
    IPD90R1K2C3ATMA1
    DISTI # IPD90R1K2C3ATMA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,900V,3.2A,83W,PG-TO252-32497
    • 1:$1.0000
    • 3:$0.8800
    • 10:$0.8000
    • 100:$0.7400
    IPD90R1K2C3ATMA1
    DISTI # 1664030RL    		Infineon Technologies AGMOSFET, N, TO-252
    RoHS: Compliant    		0
    • 100:$1.5800
    • 10:$1.9300
    • 1:$2.2300
    IPD90R1K2C3ATMA1
    DISTI # 1664030    		Infineon Technologies AGMOSFET, N, TO-252
    RoHS: Compliant    		1520
    • 100:$1.5800
    • 10:$1.9300
    • 1:$2.2300
    IPD90R1K2C3ATMA1
    DISTI # 1664030    		Infineon Technologies AGMOSFET, N, TO-2521711
    • 500:£0.7100
    • 250:£0.7560
    • 100:£0.8020
    • 25:£1.0400
    • 5:£1.1400
    IPD90R1K2C3ATMA1
    DISTI # XSFP00000115131    		Infineon Technologies AG 
    RoHS: Compliant    		5000 in Stock0 on Order
    • 5000:$0.6611
    • 2500:$0.7000
    Image Part # Description
    IPD90R1K2C3ATMA1

    Mfr.#: IPD90R1K2C3ATMA1

    OMO.#: OMO-IPD90R1K2C3ATMA1

    		 MOSFET N-Ch 900V 5.1A DPAK-2
    IPD90R1K2C3BTMA1

    Mfr.#: IPD90R1K2C3BTMA1

    OMO.#: OMO-IPD90R1K2C3BTMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 900V 5.1A TO-252
    IPD90R1K2C3

    Mfr.#: IPD90R1K2C3

    OMO.#: OMO-IPD90R1K2C3-126

    		 IGBT Transistors MOSFET N-Ch 900V 5.1A DPAK-2 CoolMOS C3
    IPD90R1K2C3ATMA1

    Mfr.#: IPD90R1K2C3ATMA1

    OMO.#: OMO-IPD90R1K2C3ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-Ch 900V 5.1A DPAK-2
    Availability
    Stock:
    Available
    On Order:
    3000
    Enter Quantity:
    Current price of IPD90R1K2C3ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.89
    $0.89
    10
    $0.85
    $8.48
    100
    $0.80
    $80.33
    500
    $0.76
    $379.30
    1000
    $0.71
    $714.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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