PartNumber | IPD90R1K2C3ATMA1 | IPD90R1K2C3BTMA1 | IPD90R1K2C3 |
Description | MOSFET N-Ch 900V 5.1A DPAK-2 | MOSFET N-CH 900V 5.1A TO-252 | IGBT Transistors MOSFET N-Ch 900V 5.1A DPAK-2 CoolMOS C3 |
Manufacturer | Infineon | - | Infineon Technologies |
Product Category | MOSFET | - | FETs - Single |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | PG-TO-252-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 900 V | - | - |
Id Continuous Drain Current | 5.1 A | - | - |
Rds On Drain Source Resistance | 1.2 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 28 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 83 W | - | - |
Configuration | Single | - | Single |
Tradename | CoolMOS | - | CoolMOS |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Series | CoolMOS C3 | - | CoolMOS |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Fall Time | 40 ns | - | 40 ns |
Product Type | MOSFET | - | - |
Rise Time | 20 ns | - | 20 ns |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 400 ns | - | 400 ns |
Typical Turn On Delay Time | 70 ns | - | 70 ns |
Part # Aliases | IPD90R1K2C3 SP001117752 | - | - |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Part Aliases | - | - | IPD90R1K2C3BTMA1 IPD90R1K2C3XT SP000413720 |
Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | PG-TO252-3 |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 83W |
Drain to Source Voltage Vdss | - | - | 900V |
Input Capacitance Ciss Vds | - | - | 710pF @ 100V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 5.1A (Tc) |
Rds On Max Id Vgs | - | - | 1.2 Ohm @ 2.8A, 10V |
Vgs th Max Id | - | - | 3.5V @ 310μA |
Gate Charge Qg Vgs | - | - | 28nC @ 10V |
Pd Power Dissipation | - | - | 83 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 5.1 A |
Vds Drain Source Breakdown Voltage | - | - | 900 V |
Rds On Drain Source Resistance | - | - | 1.2 Ohms |
Channel Mode | - | - | Enhancement |