IPD90R1K2C3ATMA1

IPD90R1K2C3ATMA1
Mfr. #:
IPD90R1K2C3ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 900V 5.1A DPAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPD90R1K2C3ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPD90R1K2C3ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
900 V
Id - Continuous Drain Current:
5.1 A
Rds On - Drain-Source Resistance:
1.2 Ohms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
28 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
83 W
Configuration:
Single
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
CoolMOS C3
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
40 ns
Product Type:
MOSFET
Rise Time:
20 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
400 ns
Typical Turn-On Delay Time:
70 ns
Part # Aliases:
IPD90R1K2C3 SP001117752
Unit Weight:
0.139332 oz
Tags
IPD90R, IPD90, IPD9, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 900 V 1.2 Ohm 28 nC CoolMOS™ Power Mosfet - TO-252-3
***ical
Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) TO-252 T/R
***ineon SCT
Replacement for CoolMOS™ C3 is CoolMOS™ P7, PG-TO252-3, RoHS
***ineon
900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPD90R1K2C3ATMA1
DISTI # V72:2272_06383545
Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
1186
  • 1000:$0.7117
  • 500:$0.9007
  • 250:$0.9224
  • 100:$1.0249
  • 25:$1.1963
  • 10:$1.3294
  • 1:$1.6989
IPD90R1K2C3ATMA1
DISTI # V36:1790_06383545
Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
    IPD90R1K2C3ATMA1
    DISTI # IPD90R1K2C3ATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 900V 5.1A TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    11210In Stock
    • 1000:$0.8078
    • 500:$1.0232
    • 100:$1.2386
    • 10:$1.5890
    • 1:$1.7800
    IPD90R1K2C3ATMA1
    DISTI # IPD90R1K2C3ATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 900V 5.1A TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    11210In Stock
    • 1000:$0.8078
    • 500:$1.0232
    • 100:$1.2386
    • 10:$1.5890
    • 1:$1.7800
    IPD90R1K2C3ATMA1
    DISTI # IPD90R1K2C3ATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 900V 5.1A TO-252
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    10000In Stock
    • 12500:$0.6692
    • 5000:$0.6954
    • 2500:$0.7320
    IPD90R1K2C3ATMA1
    DISTI # 32415848
    Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant
    2500
    • 2500:$0.8333
    IPD90R1K2C3ATMA1
    DISTI # 32404249
    Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant
    1186
    • 1000:$0.7117
    • 500:$0.9007
    • 250:$0.9224
    • 100:$1.0249
    • 25:$1.1963
    • 11:$1.3294
    IPD90R1K2C3ATMA1
    DISTI # IPD90R1K2C3ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD90R1K2C3ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$0.6029
    • 15000:$0.6139
    • 10000:$0.6359
    • 5000:$0.6599
    • 2500:$0.6839
    IPD90R1K2C3ATMA1
    DISTI # SP001117752
    Infineon Technologies AGTrans MOSFET N-CH 900V 5.1A 3-Pin TO-252 T/R (Alt: SP001117752)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 0
    • 25000:€0.6589
    • 15000:€0.7029
    • 10000:€0.7729
    • 5000:€0.8649
    • 2500:€1.1089
    IPD90R1K2C3ATMA1
    DISTI # 33P7146
    Infineon Technologies AGMOSFET, N CHANNEL, 100V, 5.1A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:5.1A,Drain Source Voltage Vds:900V,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes1520
    • 1000:$0.7200
    • 500:$0.9130
    • 250:$0.9720
    • 100:$1.0300
    • 50:$1.1300
    • 25:$1.2400
    • 10:$1.3400
    • 1:$1.5800
    IPD90R1K2C3ATMA1Infineon Technologies AGSingle N-Channel 900 V 1.2 Ohm 28 nC CoolMOS Power Mosfet - TO-252-3
    RoHS: Compliant
    2500Reel
    • 2500:$0.5950
    IPD90R1K2C3ATMA1
    DISTI # 726-IPD90R1K2C3ATMA1
    Infineon Technologies AGMOSFET N-Ch 900V 5.1A DPAK-217230
    • 1:$1.5600
    • 10:$1.3300
    • 100:$1.0200
    • 500:$0.9040
    • 1000:$0.7130
    • 2500:$0.6330
    • 10000:$0.6090
    IPD90R1K2C3ATMA1
    DISTI # IPD90R1K2C3ATMA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,900V,3.2A,83W,PG-TO252-32497
    • 1:$1.0000
    • 3:$0.8800
    • 10:$0.8000
    • 100:$0.7400
    IPD90R1K2C3ATMA1
    DISTI # 1664030RL
    Infineon Technologies AGMOSFET, N, TO-252
    RoHS: Compliant
    0
    • 100:$1.5800
    • 10:$1.9300
    • 1:$2.2300
    IPD90R1K2C3ATMA1
    DISTI # 1664030
    Infineon Technologies AGMOSFET, N, TO-252
    RoHS: Compliant
    1520
    • 100:$1.5800
    • 10:$1.9300
    • 1:$2.2300
    IPD90R1K2C3ATMA1
    DISTI # 1664030
    Infineon Technologies AGMOSFET, N, TO-2521711
    • 500:£0.7100
    • 250:£0.7560
    • 100:£0.8020
    • 25:£1.0400
    • 5:£1.1400
    IPD90R1K2C3ATMA1
    DISTI # XSFP00000115131
    Infineon Technologies AG 
    RoHS: Compliant
    5000 in Stock0 on Order
    • 5000:$0.6611
    • 2500:$0.7000
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    Availability
    Stock:
    18
    On Order:
    2001
    Enter Quantity:
    Current price of IPD90R1K2C3ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.56
    $1.56
    10
    $1.33
    $13.30
    100
    $1.02
    $102.00
    500
    $0.90
    $452.00
    1000
    $0.71
    $713.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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