PartNumber | IPG20N06S2L-65 | IPG20N06S2L35AATMA1 | IPG20N06S2L35ATMA1 |
Description | MOSFET N-Ch 55V 20A TDSON-8 OptiMOS | MOSFET MOSFET | MOSFET 2N-CH 55V 20A TDSON-8-4 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TDSON-8 | TDSON-8 | - |
Number of Channels | 2 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 55 V | - | - |
Id Continuous Drain Current | 20 A | - | - |
Rds On Drain Source Resistance | 65 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 9.4 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 43 W | - | - |
Configuration | Dual | Single | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 1.27 mm | 1.27 mm | - |
Length | 5.9 mm | 5.9 mm | - |
Transistor Type | 2 N-Channel | 1 N-Channel | - |
Width | 5.15 mm | 5.15 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 7 nS | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3 nS | - | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 10 nS | - | - |
Typical Turn On Delay Time | 2 nS | - | - |
Part # Aliases | IPG20N06S2L65ATMA1 IPG2N6S2L65XT SP000613722 | IPG20N06S2L-35A SP001023838 | - |