 |  | | |
| PartNumber | IPG20N10S436AATMA1 | IPG20N06S4L26AATMA1 | IPG20N06S4L26ATMA1 |
| Description | MOSFET N-CHANNEL 100+ | MOSFET N-Ch 55V 20A TDSON-8 | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 60 V | 60 V |
| Id Continuous Drain Current | 20 A | 20 A | 20 A |
| Rds On Drain Source Resistance | 31 mOhms, 31 mOhms | 21 mOhms, 21 mOhms | 21 mOhms, 21 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.7 V | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 16 V | 16 V |
| Qg Gate Charge | 9.4 nC | 20 nC, 20 nC | 20 nC, 20 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 43 W | 33 W | 33 W |
| Configuration | Single | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Transistor Type | 1 N-Channel | 2 N-Channel | 2 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | - | - | - |
| Fall Time | 4 ns | 10 ns, 10 ns | 10 ns, 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3 ns | 1.5 ns, 1.5 ns | 1.5 ns, 1.5 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 3 ns | 18 ns, 18 ns | 18 ns, 18 ns |
| Typical Turn On Delay Time | 1 ns | 5 ns, 5 ns | 5 ns, 5 ns |
| Part # Aliases | IPG20N10S4-36A SP001102930 | IPG20N06S4L-26A SP001023848 | IPG20N06S4L-26 IPG2N6S4L26XT SP000705588 |
| Tradename | - | OptiMOS | OptiMOS |
| Series | - | OptiMOS-T2 | OptiMOS-T2 |
| Unit Weight | - | 0.003474 oz | 0.003527 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPG20N10S4L-35 | MOSFET MOSFET | |
| IPG20N10S436AATMA1 | MOSFET N-CHANNEL 100+ | ||
| IPG20N10S4L-22 | MOSFET MOSFET | ||
| IPG20N10S4L35ATMA1 | MOSFET MOSFET | ||
| IPG20N10S4L22ATMA1 | MOSFET MOSFET | ||
| IPG20N10S4L22AATMA1 | MOSFET N-CHANNEL_100+ | ||
| IPG20N06S4L26ATMA1 | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | ||
| IPG20N10S4L35AATMA1 | MOSFET N-CHANNEL_100+ | ||
| IPG20N10S4L-22A | MOSFET MOSFET_(75V,120V( | ||
| IPG20N10S4L22AATMA1 | MOSFET 2N-CH 100V 20A TDSON-8 | ||
| IPG20N06S4L26ATMA1 | MOSFET 2N-CH 60V 20A TDSON-8 | ||
| IPG20N10S4L-22 | Trans MOSFET N-CH 100V 20A 8-Pin TDSON T/R (Alt: IPG20N10S4L-22) | ||
| IPG20N10S4L-22A | Transistor MOSFET Array Dual N-CH 100V 20A 8-Pin TDSON T/R (Alt: IPG20N10S4L-22A) | ||
| IPG20N10S4L-35 | MOSFET MOSFET | ||
| IPG20N10S4L22ATMA1 | MOSFET 2N-CH 8TDSON | ||
| IPG20N10S4L35AATMA1 | MOSFET 2N-CH 8TDSON | ||
| IPG20N10S4L35ATMA1 | MOSFET 2N-CH 8TDSON | ||
| IPG20N10S436AATMA1 | MOSFET N-CHANNEL 100+ | ||
| IPG20N06S4L26AATMA1 | RF Bipolar Transistors MOSFET N-Ch 55V 20A TDSON-8 | ||
| IPG20N06S4L26AATMA1-CUT TAPE | New and Original | ||
| IPG20N10S436AATMA1-CUT TAPE | New and Original | ||
| IPG20N06S4L26XT | New and Original | ||
| IPG20N10S4L-35A | New and Original | ||
| IPG2N06S2L-65 | New and Original |