IPG20N0

IPG20N06S4L26AATMA1 vs IPG20N06S4L26ATMA1 vs IPG20N06S4L26AATMA1-CUT TAPE

 
PartNumberIPG20N06S4L26AATMA1IPG20N06S4L26ATMA1IPG20N06S4L26AATMA1-CUT TAPE
DescriptionMOSFET N-Ch 55V 20A TDSON-8MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current20 A20 A-
Rds On Drain Source Resistance21 mOhms, 21 mOhms21 mOhms, 21 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage16 V16 V-
Qg Gate Charge20 nC, 20 nC20 nC, 20 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation33 W33 W-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS-T2OptiMOS-T2-
Transistor Type2 N-Channel2 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time10 ns, 10 ns10 ns, 10 ns-
Product TypeMOSFETMOSFET-
Rise Time1.5 ns, 1.5 ns1.5 ns, 1.5 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time18 ns, 18 ns18 ns, 18 ns-
Typical Turn On Delay Time5 ns, 5 ns5 ns, 5 ns-
Part # AliasesIPG20N06S4L-26A SP001023848IPG20N06S4L-26 IPG2N6S4L26XT SP000705588-
Unit Weight0.003474 oz0.003527 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPG20N06S4L26ATMA1 MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
IPG20N06S4L26ATMA1 MOSFET 2N-CH 60V 20A TDSON-8
IPG20N06S4L26AATMA1 RF Bipolar Transistors MOSFET N-Ch 55V 20A TDSON-8
IPG20N06S4L26AATMA1-CUT TAPE New and Original
IPG20N06S4L26XT New and Original
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