IPG20N06S

IPG20N06S4L26AATMA1 vs IPG20N06S4L14ATMA2 vs IPG20N06S4L14ATMA1

 
PartNumberIPG20N06S4L26AATMA1IPG20N06S4L14ATMA2IPG20N06S4L14ATMA1
DescriptionMOSFET N-Ch 55V 20A TDSON-8MOSFET MOSFETMOSFET N-CHANNEL_55/60V
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTDSON-8TDSON-8TDSON-8
Number of Channels2 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance21 mOhms, 21 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage16 V--
Qg Gate Charge20 nC, 20 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation33 W--
ConfigurationDualSingleSingle
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameOptiMOS--
PackagingReelReelReel
Height1 mm1.27 mm1.27 mm
Length5.9 mm5.9 mm5.9 mm
SeriesOptiMOS-T2--
Transistor Type2 N-Channel1 N-Channel1 N-Channel
Width5.15 mm5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time10 ns, 10 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time1.5 ns, 1.5 ns--
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time18 ns, 18 ns--
Typical Turn On Delay Time5 ns, 5 ns--
Part # AliasesIPG20N06S4L-26A SP001023848IPG20N06S4L-14 IPG2N6S4L14XT SP001028632IPG20N06S4L-14 IPG20N06S4L14XT SP000705540
Unit Weight0.003474 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPG20N06S4L26AATMA1 MOSFET N-Ch 55V 20A TDSON-8
IPG20N06S4L26ATMA1 MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
IPG20N06S4L14ATMA2 MOSFET MOSFET
IPG20N06S4L14ATMA2 MOSFET 2N-CH 8TDSON
IPG20N06S4L14ATMA1 MOSFET 2N-CH 8TDSON
IPG20N06S4L26ATMA1 MOSFET 2N-CH 60V 20A TDSON-8
IPG20N06S4L26AATMA1 RF Bipolar Transistors MOSFET N-Ch 55V 20A TDSON-8
IPG20N06S4L26AATMA1-CUT TAPE New and Original
IPG20N06S4L26XT New and Original
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