PartNumber | IPG20N06S2L-35 | IPG20N06S2L-65 | IPG20N06S2L-50 |
Description | MOSFET N-Ch 55V 20A TDSON-8 OptiMOS | MOSFET N-Ch 55V 20A TDSON-8 OptiMOS | MOSFET N-Ch 55V 20A TDSON-8 OptiMOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 55 V | 55 V | 55 V |
Id Continuous Drain Current | 20 A | 20 A | 20 A |
Rds On Drain Source Resistance | 35 mOhms | 65 mOhms | 50 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 65 W | 43 W | 51 W |
Configuration | Dual | Dual | Dual |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 1.27 mm | 1.27 mm | 1.27 mm |
Length | 5.9 mm | 5.9 mm | 5.9 mm |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
Width | 5.15 mm | 5.15 mm | 5.15 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | IPG20N06S2L35ATMA1 IPG2N6S2L35XT SP000613718 | IPG20N06S2L65ATMA1 IPG2N6S2L65XT SP000613722 | IPG20N06S2L50ATMA1 IPG2N6S2L5XT SP000613728 |
Qg Gate Charge | - | 9.4 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 7 nS | - |
Rise Time | - | 3 nS | - |
Typical Turn Off Delay Time | - | 10 nS | - |
Typical Turn On Delay Time | - | 2 nS | - |