 | | | |
| PartNumber | IPI051N15N5AKSA1 | IPI052NE7N3 G | IPI057N08N3 G |
| Description | MOSFET | MOSFET N-Ch 75V 80A I2PAK-3 OptiMOS 3 | MOSFET N-Ch 80V 80A I2PAK-3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | TO-262-3 |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 150 V | 75 V | 80 V |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Tube | Tube | Tube |
| Height | 9.45 mm | 9.45 mm | 9.45 mm |
| Length | 10.2 mm | 10.2 mm | 10.2 mm |
| Series | OptiMOS 5 | - | IPI057N08 |
| Width | 4.5 mm | 4.5 mm | 4.5 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 500 | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | IPI051N15N5 SP001326440 | IPI052NE7N3GAKSA1 SP000657442 | IPI057N08N3GXKSA1 |
| Unit Weight | 0.070548 oz | 0.084199 oz | 0.084199 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Id Continuous Drain Current | - | 80 A | 80 A |
| Rds On Drain Source Resistance | - | 5.2 mOhms | 5.7 mOhms |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Qg Gate Charge | - | 51 nC | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Pd Power Dissipation | - | 150 W | 150 W |
| Configuration | - | Single | Single |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 8 nS | 10 ns |
| Rise Time | - | 11 ns | 66 ns |
| Typical Turn Off Delay Time | - | 30 nS | 38 ns |
| Channel Mode | - | - | Enhancement |
| Typical Turn On Delay Time | - | - | 18 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI051N15N5AKSA1 | MOSFET | |
| IPI051N15N5AKSA1 | MV POWER MOS | ||
| IPI057N08N3 G | MOSFET N-CH 80V 80A TO262-3 | ||
| IPI05CN10N G | MOSFET N-CH 100V 100A TO262-3 | ||
| IPI05N03LA | MOSFET N-CH 25V 80A I2PAK | ||
| IPI052NE7N3 G | IGBT Transistors MOSFET N-Ch 75V 80A I2PAK-3 OptiMOS 3 | ||
Infineon Technologies |
IPI052NE7N3 G | MOSFET N-Ch 75V 80A I2PAK-3 OptiMOS 3 | |
| IPI057N08N3 G | MOSFET N-Ch 80V 80A I2PAK-3 | ||
| IPI051N15N5 | New and Original | ||
| IPI052NE7N3 | New and Original | ||
| IPI052NE7N3G | Power Field-Effect Transistor, 80A I(D), 75V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| IPI052NE7N3G,052NE7N, | New and Original | ||
| IPI057N08N3 | New and Original | ||
| IPI057N08N3G | New and Original | ||
| IPI05CN10NG | New and Original | ||
| IPI05CNE8N G | MOSFET N-Ch 85V 100A I2PAK-3 | ||
| IPI05CNE8NG | New and Original |