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| PartNumber | IPI65R190C6 | IPI65R190CFD | IPI65R190C6XKSA1 |
| Description | MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6 | MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2 | MOSFET HIGH POWER_LEGACY |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | TO-262-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 700 V | 650 V | - |
| Id Continuous Drain Current | 20.2 A | 17.5 A | - |
| Rds On Drain Source Resistance | 190 mOhms | 190 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 30 V | - |
| Qg Gate Charge | 73 nC | 68 nC | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 151 W | 151 W | - |
| Configuration | Single | Single | - |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Tube | Tube | Tube |
| Height | 9.45 mm | 9.45 mm | 9.45 mm |
| Length | 10.2 mm | 10.2 mm | 10.2 mm |
| Series | CoolMOS C6 | CoolMOS CFD2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.5 mm | 4.5 mm | 4.5 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 10 ns | 6.4 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | 8.4 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 133 nS | - | - |
| Part # Aliases | IPI65R190C6XKSA1 IPI65R19C6XK SP000863900 | IPI65R190CFDXKSA1 IPI65R19CFDXK SP000905386 | IPI65R190C6 IPI65R19C6XK SP000863900 |
| Unit Weight | 0.084199 oz | 0.084199 oz | 0.084199 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI65R190C6 | MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6 | |
| IPI65R190CFD | MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2 | ||
| IPI65R190CFDXKSA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
| IPI65R190CFDXKSA1 | MOSFET N-CH 650V 17.5A TO262 | ||
| IPI65R190CFDXKSA2 | HIGH POWER_LEGACY | ||
| IPI65R190C6XKSA1 | MOSFET N-CH 650V 20.2A TO262 | ||
Infineon Technologies |
IPI65R190C6XKSA1 | MOSFET HIGH POWER_LEGACY | |
| IPI65R190CFDXKSA1 | MOSFET HIGH POWER_LEGACY | ||
| IPI65R190C6,65C6190 | New and Original | ||
| IPI65R190C6 | RF Bipolar Transistors MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6 | ||
| IPI65R190CFD | RF Bipolar Transistors MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2 |