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| PartNumber | IPI65R190CFD | IPI65R190CFDXKSA2 | IPI65R190CFDXKSA1 |
| Description | MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | MOSFET HIGH POWER_LEGACY |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | TO-262-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 17.5 A | 17.5 A | - |
| Rds On Drain Source Resistance | 190 mOhms | 190 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 3.5 V | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Qg Gate Charge | 68 nC | 68 nC | - |
| Pd Power Dissipation | 151 W | 151 W | - |
| Configuration | Single | Single | - |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Tube | Tube | Tube |
| Height | 9.45 mm | - | 9.45 mm |
| Length | 10.2 mm | - | 10.2 mm |
| Series | CoolMOS CFD2 | CFD2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.5 mm | - | 4.5 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 6.4 ns | 6.4 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8.4 ns | 8.4 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | IPI65R190CFDXKSA1 IPI65R19CFDXK SP000905386 | IPI65R190CFD | IPI65R190CFD IPI65R19CFDXK SP000905386 |
| Unit Weight | 0.084199 oz | - | 0.084199 oz |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Channel Mode | - | Enhancement | - |
| Typical Turn Off Delay Time | - | 53.2 ns | - |
| Typical Turn On Delay Time | - | 12 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI65R190CFD | MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2 | |
| IPI65R190CFDXKSA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
| IPI65R190CFDXKSA1 | MOSFET N-CH 650V 17.5A TO262 | ||
| IPI65R190CFDXKSA2 | HIGH POWER_LEGACY | ||
Infineon Technologies |
IPI65R190CFDXKSA1 | MOSFET HIGH POWER_LEGACY | |
| IPI65R190CFD | RF Bipolar Transistors MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2 |