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| PartNumber | IPL60R365P7AUMA1 | IPL60R360P6SATMA1 |
| Description | MOSFET | MOSFET N-Ch 600V 11.3A ThinPAK 5x6 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | VSON-4 | ThinPAK-56-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 10 A | 11.3 A |
| Rds On Drain Source Resistance | 310 mOhms | 360 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 4 V |
| Vgs Gate Source Voltage | 20 V | 30 V |
| Qg Gate Charge | 13 nC | 22 nC |
| Minimum Operating Temperature | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 46 W | 89.3 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Reel | Reel |
| Series | CoolMOS P7 | CoolMOS P6 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 10 ns | 7 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 4 ns | 7 ns |
| Factory Pack Quantity | 3000 | 5000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 42 ns | 33 ns |
| Typical Turn On Delay Time | 8 ns | 12 ns |
| Part # Aliases | IPL60R365P7 SP001606054 | IPL60R360P6S SP001163030 |
| Height | - | 1.1 mm |
| Length | - | 6 mm |
| Width | - | 5 mm |
| Unit Weight | - | 0.002677 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPL60R365P7AUMA1 | MOSFET | |
| IPL60R360P6SATMA1 | MOSFET N-Ch 600V 11.3A ThinPAK 5x6 | ||
| IPL60R360P6SATMA1 | MOSFET N-CH 600V 8THINPAK | ||
| IPL60R365P7AUMA1 | MOSFET N-CH 650V 10A VSON-4 | ||
| IPL60R360P6S | New and Original | ||
| IPL60R365P7 | Transistor MOSFET N-CH 650V 10A 4-Pin VSON T/R (Alt: IPL60R365P7) |