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IPL60R365P7AUMA1

IPL60R365P7AUMA1
Mfr. #:
IPL60R365P7AUMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IPL60R365P7AUMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPL60R365P7AUMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
VSON-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
10 A
Rds On - Drain-Source Resistance:
310 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
13 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
46 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Series:
CoolMOS P7
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
4 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
42 ns
Typical Turn-On Delay Time:
8 ns
Part # Aliases:
IPL60R365P7 SP001606054
Tags
IPL60R36, IPL60R3, IPL60, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 365 mOhm 25 nC CoolMOS™ Power Mosfet - VSON-4
***ark
Mosfet, N-Ch, 600V, 10A, 46W, Vson; Transistor Polarity:n Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.31Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Part # Mfg. Description Stock Price
IPL60R365P7AUMA1
DISTI # V72:2272_17076872		Infineon Technologies AGTrans MOSFET N-CH 600V 10A 4-Pin VSON EP T/R3000
  • 3000:$0.9481
  • 1000:$0.9662
  • 500:$0.9844
  • 250:$1.0935
  • 100:$1.2153
  • 25:$1.5916
  • 10:$1.7686
  • 1:$2.2641
IPL60R365P7AUMA1
DISTI # V36:1790_17076872		Infineon Technologies AGTrans MOSFET N-CH 600V 10A 4-Pin VSON EP T/R0
  • 3000000:$0.8304
  • 1500000:$0.8307
  • 300000:$0.8535
  • 30000:$0.8934
  • 3000:$0.9000
IPL60R365P7AUMA1
DISTI # IPL60R365P7AUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 10A VSON-4
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8941In Stock
  • 1000:$1.1180
  • 500:$1.3493
  • 100:$1.6422
  • 10:$2.0430
  • 1:$2.2700
IPL60R365P7AUMA1
DISTI # IPL60R365P7AUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 650V 10A VSON-4
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8941In Stock
  • 1000:$1.1180
  • 500:$1.3493
  • 100:$1.6422
  • 10:$2.0430
  • 1:$2.2700
IPL60R365P7AUMA1
DISTI # IPL60R365P7AUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 10A VSON-4
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 6000:$0.9731
  • 3000:$1.0105
IPL60R365P7AUMA1
DISTI # 33122829		Infineon Technologies AGTrans MOSFET N-CH 600V 10A 4-Pin VSON EP T/R3000
  • 3000:$1.4594
IPL60R365P7AUMA1
DISTI # 33099350		Infineon Technologies AGTrans MOSFET N-CH 600V 10A 4-Pin VSON EP T/R3000
  • 8:$2.2641
IPL60R365P7AUMA1
DISTI # 33925026		Infineon Technologies AGTrans MOSFET N-CH 600V 10A 4-Pin VSON EP T/R3000
  • 3000:$0.8929
IPL60R365P7AUMA1
DISTI # IPL60R365P7AUMA1		Infineon Technologies AGLOW POWER_NEW - Tape and Reel (Alt: IPL60R365P7AUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.9049
  • 18000:$0.9219
  • 12000:$0.9539
  • 6000:$0.9899
  • 3000:$1.0269
IPL60R365P7AUMA1
DISTI # SP001606054		Infineon Technologies AGLOW POWER_NEW (Alt: SP001606054)
RoHS: Compliant
Min Qty: 3000		Europe - 0
  • 30000:€0.8959
  • 18000:€0.9429
  • 12000:€1.0109
  • 6000:€1.2159
  • 3000:€1.5619
IPL60R365P7AUMA1
DISTI # 84AC6837		Infineon Technologies AGMOSFET, N-CH, 600V, 10A, 46W, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.31ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes498
  • 1000:$1.0400
  • 500:$1.2500
  • 250:$1.3400
  • 100:$1.4300
  • 50:$1.5600
  • 25:$1.6800
  • 10:$1.8000
  • 1:$2.1100
IPL60R365P7AUMA1Infineon Technologies AGSingle N-Channel 600 V 365 mOhm 25 nC CoolMOS Power Mosfet - VSON-4
RoHS: Not Compliant		3000Reel
  • 3000:$0.8900
IPL60R365P7AUMA1
DISTI # 726-IPL60R365P7AUMA1		Infineon Technologies AGMOSFET
RoHS: Compliant		16426
  • 1:$2.0900
  • 10:$1.7800
  • 100:$1.4200
  • 500:$1.2400
  • 1000:$1.0300
  • 3000:$0.9630
  • 6000:$0.9270
IPL60R365P7AUMA1
DISTI # XSFP00000116982		Infineon Technologies AG 
RoHS: Compliant		6000 in Stock0 on Order
  • 6000:$1.1900
  • 3000:$1.2700
IPL60R365P7AUMA1
DISTI # 2983367		Infineon Technologies AGMOSFET, N-CH, 600V, 10A, 46W, VSON
RoHS: Compliant		498
  • 1000:$1.4300
  • 500:$1.6300
  • 250:$1.7500
  • 100:$1.8700
  • 10:$2.3500
  • 1:$3.1000
IPL60R365P7AUMA1
DISTI # 2983367		Infineon Technologies AGMOSFET, N-CH, 600V, 10A, 46W, VSON498
  • 500:£0.9060
  • 250:£0.9740
  • 100:£1.0400
  • 10:£1.3100
  • 1:£1.7400
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Availability
Stock:
16
On Order:
1999
Enter Quantity:
Current price of IPL60R365P7AUMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.09
$2.09
10
$1.78
$17.80
100
$1.42
$142.00
500
$1.24
$620.00
1000
$1.03
$1 030.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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