PartNumber | IPP051N15N5AKSA1 | IPP052N06L3 G | IPP050N06N G |
Description | MOSFET | MOSFET N-Ch 60V 80A TO220-3 OptiMOS 3 | MOSFET N-Ch 60V 100A TO220-3 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | PG-TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 150 V | 60 V | 60 V |
Id Continuous Drain Current | 120 A | 80 A | 100 A |
Rds On Drain Source Resistance | 5.1 mOhms | 4.2 mOhms | 5 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 1.2 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 80 nC | 50 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 300 W | 115 W | 300 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Tube | Tube | Tube |
Height | 15.65 mm | 15.65 mm | 15.65 mm |
Length | 10 mm | 10 mm | 10 mm |
Series | OptiMOS 5 | OptiMOS 3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.4 mm | 4.4 mm | 4.4 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 59 S | 58 S | - |
Fall Time | 37 ns | 12 ns | 30 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 5.3 ns | 5 ns | 31 ns |
Factory Pack Quantity | 500 | 500 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 4.5 ns | 56 ns | 59 ns |
Typical Turn On Delay Time | 19.6 ns | 11 ns | 21 ns |
Part # Aliases | IPP051N15N5 SP001279600 | IPP052N06L3GXKSA1 IPP52N6L3GXK SP000680802 | IPP050N06NGXK |
Unit Weight | 0.063493 oz | 0.211644 oz | 0.211644 oz |