IPP051N15N5AKSA1

IPP051N15N5AKSA1
Mfr. #:
IPP051N15N5AKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IPP051N15N5AKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPP051N15N5AKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
PG-TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
150 V
Id - Continuous Drain Current:
120 A
Rds On - Drain-Source Resistance:
5.1 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
80 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Tube
Height:
15.65 mm
Length:
10 mm
Series:
OptiMOS 5
Transistor Type:
1 N-Channel
Width:
4.4 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
59 S
Fall Time:
37 ns
Product Type:
MOSFET
Rise Time:
5.3 ns
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
4.5 ns
Typical Turn-On Delay Time:
19.6 ns
Part # Aliases:
IPP051N15N5 SP001279600
Unit Weight:
0.063493 oz
Tags
IPP051, IPP05, IPP0, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 150 V 5.1 mOhm Flange Mount OptiMOSª5 Power Mosfet - TO-220
***ical
OptiMOS 5 Power-Transistor,150V
***ronik
N-CH 150V 120A 5,1mOhm TO-220-3
***et
MOS Power Transistors LV (< 200V)
***ark
Mosfet, N-Ch, 150V, 120A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.004Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 150V, 120A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 150V, 120A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:150V; Resistenza di Attivazione Rds(on):0.004ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.8V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The new OptiMOS 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. | Summary of Features: Lower R DS(on) without compromising FOM gd and FOM oss; Lower output charge; Ultra-low reverse recovery charge; Increased commutation ruggedness; Higher switching frequency possible | Benefits: Reduced paralleling; Size reduction enabled with SuperSO8 best-in-class; Higher power density designs; More rugged products; System cost reduction; Improved EMI behavior | Target Applications: Low voltage drives; Telecom; Solar
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
Part # Mfg. Description Stock Price
IPP051N15N5AKSA1
DISTI # V99:2348_16140311
Infineon Technologies AGOptiMOS 5 Power-Transistor,150V
RoHS: Compliant
350
  • 2500:$4.0199
  • 1000:$4.1300
  • 500:$4.4620
  • 250:$4.9429
  • 100:$5.2240
  • 25:$6.0679
  • 10:$6.4340
  • 1:$7.9024
IPP051N15N5AKSA1
DISTI # V36:1790_16140311
Infineon Technologies AGOptiMOS 5 Power-Transistor,150V
RoHS: Compliant
0
  • 500000:$3.6810
  • 250000:$3.6870
  • 50000:$4.6980
  • 5000:$6.8440
  • 500:$7.2240
IPP051N15N5AKSA1
DISTI # IPP051N15N5AKSA1-ND
Infineon Technologies AGMV POWER MOS
RoHS: Compliant
Min Qty: 1
Container: Tube
460In Stock
  • 2500:$3.4544
  • 500:$4.1187
  • 100:$4.7299
  • 25:$5.4472
  • 10:$5.7130
  • 1:$6.3200
IPP051N15N5AKSA1
DISTI # 33695947
Infineon Technologies AGOptiMOS 5 Power-Transistor,150V
RoHS: Compliant
350
  • 2:$7.9024
IPP051N15N5AKSA1
DISTI # IPP051N15N5
Infineon Technologies AGMOS Power Transistors LV (< 200V) (Alt: IPP051N15N5)
RoHS: Compliant
Min Qty: 500
Asia - 2500
  • 25000:$3.6677
  • 12500:$3.7216
  • 5000:$3.7772
  • 2500:$3.8344
  • 1500:$3.9542
  • 1000:$4.0818
  • 500:$4.2178
IPP051N15N5AKSA1
DISTI # IPP051N15N5AKSA1
Infineon Technologies AGMOS Power Transistors LV (< 200V) - Rail/Tube (Alt: IPP051N15N5AKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 3000:$3.1900
  • 5000:$3.1900
  • 2000:$3.2900
  • 1000:$3.4900
  • 500:$3.5900
IPP051N15N5AKSA1
DISTI # SP001279600
Infineon Technologies AGMOS Power Transistors LV (< 200V) (Alt: SP001279600)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€2.6900
  • 500:€2.8900
  • 100:€2.9900
  • 50:€3.0900
  • 25:€3.2900
  • 10:€3.3900
  • 1:€3.6900
IPP051N15N5AKSA1
DISTI # 43AC3275
Infineon Technologies AGMOSFET, N-CH, 150V, 120A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.8V,Power RoHS Compliant: Yes1190
  • 500:$3.9600
  • 250:$4.3400
  • 100:$4.5500
  • 50:$4.8900
  • 25:$5.2300
  • 10:$5.4900
  • 1:$6.0800
IPP051N15N5AKSA1
DISTI # 726-IPP051N15N5AKSA1
Infineon Technologies AGMOSFET
RoHS: Compliant
2968
  • 1:$6.0200
  • 10:$5.4400
  • 25:$5.1800
  • 100:$4.5000
  • 250:$4.3000
  • 500:$3.9200
  • 1000:$3.4100
IPP051N15N5AKSA1
DISTI # 2803399
Infineon Technologies AGMOSFET, N-CH, 150V, 120A, TO-220-31175
  • 100:£4.0400
  • 10:£4.6500
  • 1:£5.9800
IPP051N15N5AKSA1
DISTI # 2803399
Infineon Technologies AGMOSFET, N-CH, 150V, 120A, TO-220-3
RoHS: Compliant
1190
  • 100:$6.5100
  • 10:$7.3700
  • 1:$7.8800
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of IPP051N15N5AKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.02
$6.02
10
$5.44
$54.40
25
$5.18
$129.50
100
$4.50
$450.00
250
$4.30
$1 075.00
500
$3.92
$1 960.00
1000
$3.41
$3 410.00
2500
$3.29
$8 225.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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