 | | |
| PartNumber | IPP057N08N3GXKSA1 | IPP057N08N3GHKSA1 |
| Description | MOSFET N-Ch 80V 80A TO220-3 OptiMOS 3 | MOSFET N-Ch 80V 80A TO220-3 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V |
| Id Continuous Drain Current | 80 A | 80 A |
| Rds On Drain Source Resistance | 4.9 mOhms | 5.4 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 69 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 150 W | - |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Tube | Tube |
| Height | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm |
| Series | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 52 S | - |
| Fall Time | 10 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 66 ns | - |
| Factory Pack Quantity | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 38 ns | - |
| Typical Turn On Delay Time | 18 ns | - |
| Part # Aliases | G IPP057N08N3 IPP57N8N3GXK SP000680810 | G IPP057N08N3 IPP057N08N3GXK SP000395165 |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP057N08N3GXKSA1 | MOSFET N-Ch 80V 80A TO220-3 OptiMOS 3 | |
| IPP057N08N3GXKSA1 | MOSFET N-CH 80V 80A TO220-3 | ||
| IPP057N08N3GHKSA1 | MOSFET N-Ch 80V 80A TO220-3 | ||
Infineon Technologies |
IPP057N08N3GHKSA1 | MOSFET N-Ch 80V 80A TO220-3 | |
| IPP057N08N3G | Power Field-Effect Transistor, 80A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPP057N08N3G , 2SD780A-D | New and Original | ||
| IPP057N08N3G 057N08N | New and Original | ||
| IPP057N08N3GHKSA1 , 2SD7 | New and Original | ||
| IPP057N08N3GXKSA1 , 2SD7 | New and Original |