 | | | |
| PartNumber | IPP110N20N3 G | IPP110N20NA | IPP110N20N3GXKSA1 |
| Description | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 | MOSFET N-Ch 200V 88A TO220-3 | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | 200 V |
| Id Continuous Drain Current | 88 A | 88 A | 88 A |
| Rds On Drain Source Resistance | 9.9 mOhms | 9.9 mOhms | 9.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 87 nC | 87 nC | 87 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 300 W | 300 W | 300 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.4 mm | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 71 S | - | 71 S |
| Fall Time | 11 ns | 11 ns | 11 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 26 ns | 26 ns | 26 ns |
| Factory Pack Quantity | 500 | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 41 ns | 41 ns | 41 ns |
| Typical Turn On Delay Time | 18 ns | 18 ns | 18 ns |
| Part # Aliases | IPP110N20N3GXKSA1 IPP11N2N3GXK SP000677892 | IPP110N20NAAKSA1 IPP11N2NAXK SP000877672 | G IPP110N20N3 IPP11N2N3GXK SP000677892 |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP110N20N3 G | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 | |
| IPP110N20NA | MOSFET N-Ch 200V 88A TO220-3 | ||
| IPP110N20N3GXKSA1 | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 | ||
| IPP110N20NAXK | MOSFET N-Ch 200V 88A TO220-3 | ||
| IPP110N20N3GXKSA1 | MOSFET N-CH 200V 88A TO220-3 | ||
| IPP110N20NAAKSA1 | MOSFET N-CH 200V 88A TO220-3 | ||
Infineon Technologies |
IPP110N20NAAKSA1 | MOSFET MV POWER MOS | |
| IPP110N06L | New and Original | ||
| IPP110N06L G | MOSFET N-Ch 60V 78A TO220-3 | ||
| IPP110N06LG | New and Original | ||
| IPP110N20N | MOSFET, N-CH, 200V, 88A, TO220-3 | ||
| IPP110N20N(110N20N) | New and Original | ||
| IPP110N20N3 | New and Original | ||
| IPP110N20N3 G | Trans MOSFET N-CH 200V 88A 3-Pin TO-220 Tube (Alt: IPP110N20N3 G) | ||
| IPP110N20N3G | POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.011OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | ||
| IPP110N20N3G , 2SD794A | New and Original | ||
| IPP110N20N3G 110N20N | New and Original | ||
| IPP110N20N3GS | New and Original | ||
| IPP110N20NA | MOSFET N-Ch 200V 88A TO220-3 |