IPP110N20N3

IPP110N20N3 G vs IPP110N20N3 vs IPP110N20N3G

 
PartNumberIPP110N20N3 GIPP110N20N3IPP110N20N3G
DescriptionMOSFET N-Ch 200V 88A TO220-3 OptiMOS 3POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.011OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
ManufacturerInfineon-INF
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current88 A--
Rds On Drain Source Resistance9.9 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge87 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingTube--
Height15.65 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Forward Transconductance Min71 S--
Fall Time11 ns--
Product TypeMOSFET--
Rise Time26 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time41 ns--
Typical Turn On Delay Time18 ns--
Part # AliasesIPP110N20N3GXKSA1 IPP11N2N3GXK SP000677892--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPP110N20N3 G MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3
IPP110N20N3GXKSA1 MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3
IPP110N20N3GXKSA1 MOSFET N-CH 200V 88A TO220-3
IPP110N20N3 New and Original
IPP110N20N3 G Trans MOSFET N-CH 200V 88A 3-Pin TO-220 Tube (Alt: IPP110N20N3 G)
IPP110N20N3G POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.011OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
IPP110N20N3G , 2SD794A New and Original
IPP110N20N3G 110N20N New and Original
IPP110N20N3GS New and Original
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