PartNumber | IPP60R750E6XKSA1 | IPP60R600E6XKSA1 | IPP60R600P7XKSA1 |
Description | MOSFET LOW POWER_LEGACY | MOSFET LOW POWER_LEGACY | MOSFET |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Tube | Tube | Tube |
Height | 15.65 mm | 15.65 mm | - |
Length | 10 mm | 10 mm | - |
Width | 4.4 mm | 4.4 mm | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | IPP60R750E6XKSA1 SP000842482 | IPP60R600E6XKSA1 SP000797630 | IPP60R600P7 SP001606032 |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.063493 oz |
RoHS | - | - | Y |
Number of Channels | - | - | 1 Channel |
Transistor Polarity | - | - | N-Channel |
Vds Drain Source Breakdown Voltage | - | - | 600 V |
Id Continuous Drain Current | - | - | 6 A |
Rds On Drain Source Resistance | - | - | 490 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 3 V |
Vgs Gate Source Voltage | - | - | 20 V |
Qg Gate Charge | - | - | 9 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 30 W |
Configuration | - | - | Single |
Channel Mode | - | - | Enhancement |
Series | - | - | CoolMOS P7 |
Transistor Type | - | - | 1 N-Channel |
Fall Time | - | - | 19 ns |
Rise Time | - | - | 6 ns |
Factory Pack Quantity | - | - | 500 |
Typical Turn Off Delay Time | - | - | 37 ns |
Typical Turn On Delay Time | - | - | 7 ns |