PartNumber | IPP60R099C7XKSA1 | IPP60R099C6 | IPP60R099C6XKSA1 |
Description | MOSFET HIGH POWER_NEW | MOSFET N-Ch 650V 38A TO220-3 CoolMOS C6 | MOSFET N-Ch 650V 38A TO220-3 CoolMOS C6 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 22 A | 37.9 A | 37.9 A |
Rds On Drain Source Resistance | 85 mOhms | 90 mOhms | 90 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 2.5 V | 2.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 42 nC | 119 nC | 119 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 110 W | 278 W | 278 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Tube | Tube | Tube |
Height | 15.65 mm | 15.65 mm | 15.65 mm |
Length | 10 mm | 10 mm | 10 mm |
Series | CoolMOS C7 | CoolMOS C6 | CoolMOS C6 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.4 mm | 4.4 mm | 4.4 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 4.5 ns | 6 ns | 6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8 ns | 12 ns | 12 ns |
Factory Pack Quantity | 500 | 500 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 54 ns | 75 ns | 75 ns |
Typical Turn On Delay Time | 11.8 ns | 15 ns | 15 ns |
Part # Aliases | IPP60R099C7 SP001298000 | IPP60R099C6XKSA1 IPP6R99C6XK SP000687556 | IPP60R099C6 IPP6R99C6XK SP000687556 |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |