PartNumber | IPP65R190C7 | IPP65R190C6XKSA1 | IPP65R190C6 |
Description | MOSFET HIGH POWER_NEW | MOSFET N-Ch 700V 20.2A TO220-3 | MOSFET N-Ch 700V 20.2A TO220-3 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
Id Continuous Drain Current | 13 A | 20.2 A | 20.2 A |
Rds On Drain Source Resistance | 168 mOhms | 170 mOhms | 170 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 2.5 V | 2.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 23 nC | 73 nC | 73 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 72 W | 151 W | 151 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Tube | Tube | Tube |
Height | 15.65 mm | 15.65 mm | 15.65 mm |
Length | 10 mm | 10 mm | 10 mm |
Series | CoolMOS C7 | CoolMOS C6 | CoolMOS C6 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.4 mm | 4.4 mm | 4.4 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 9 ns | 10 ns | 10 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 11 ns | 12 ns | 12 ns |
Factory Pack Quantity | 500 | 500 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 54 ns | 133 ns | 133 ns |
Typical Turn On Delay Time | 11 ns | - | 13 ns |
Part # Aliases | IPP65R190C7FKSA1 SP000929426 | IPP65R190C6 IPP65R19C6XK SP000849360 | IPP65R190C6XKSA1 IPP65R19C6XK SP000849360 |
Unit Weight | 0.081130 oz | 0.211644 oz | 0.063493 oz |