IPP65R190CFDXKSA2

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

17.5 A

Rds On - Drain-Source Resistance:

190 mOhms

Vgs th - Gate-Source Threshold Voltage:

3.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

68 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

151 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

CoolMOS

Packaging:

Tube

Series:

CFD2

Transistor Type:

1 N-Channel

Brand:

Infineon Technologies

Fall Time:

6.4 ns

Product Type:

MOSFET

Rise Time:

8.4 ns

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

53.2 ns

Typical Turn-On Delay Time:

12 ns

Part # Aliases:

IPP65R190CFD

Tags

IPP65R190CF, IPP65R190C, IPP65R19, IPP65R1, IPP65, IPP6, IPP