 | | | |
| PartNumber | IPP65R190C7 | IPP65R190C6XKSA1 | IPP65R190C6 |
| Description | MOSFET HIGH POWER_NEW | MOSFET N-Ch 700V 20.2A TO220-3 | MOSFET N-Ch 700V 20.2A TO220-3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
| Id Continuous Drain Current | 13 A | 20.2 A | 20.2 A |
| Rds On Drain Source Resistance | 168 mOhms | 170 mOhms | 170 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 2.5 V | 2.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 23 nC | 73 nC | 73 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 72 W | 151 W | 151 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | CoolMOS C7 | CoolMOS C6 | CoolMOS C6 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.4 mm | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 9 ns | 10 ns | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | 12 ns | 12 ns |
| Factory Pack Quantity | 500 | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 54 ns | 133 ns | 133 ns |
| Typical Turn On Delay Time | 11 ns | - | 13 ns |
| Part # Aliases | IPP65R190C7FKSA1 SP000929426 | IPP65R190C6 IPP65R19C6XK SP000849360 | IPP65R190C6XKSA1 IPP65R19C6XK SP000849360 |
| Unit Weight | 0.081130 oz | 0.211644 oz | 0.063493 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP65R190CFD | MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2 | |
| IPP65R190E6XKSA1 | MOSFET N-Ch 700V 20.2A TO220-3 | ||
| IPP65R190E6 | MOSFET N-Ch 700V 20.2A TO220-3 | ||
| IPP65R190CFDAAKSA1 | MOSFET N-Ch 650V 17.5A TO220-3 | ||
| IPP65R190C7 | MOSFET HIGH POWER_NEW | ||
| IPP65R190C7FKSA1 | MOSFET HIGH POWER_NEW | ||
| IPP65R190C6XKSA1 | MOSFET N-Ch 700V 20.2A TO220-3 | ||
| IPP65R190C6 | MOSFET N-Ch 700V 20.2A TO220-3 | ||
| IPP65R190CFDXKSA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
| IPP65R190CFDXKSA2 | HIGH POWER_LEGACY | ||
| IPP65R190C7FKSA1 | MOSFET N-CH 650V 13A TO220 | ||
| IPP65R190CFDXKSA1 | MOSFET N-CH 650V 17.5A TO220 | ||
| IPP65R190CFDAAKSA1 | MOSFET N-CH 650V TO-220-3 | ||
| IPP65R190C6XKSA1 | MOSFET N-CH 650V 20.2A TO220 | ||
| IPP65R190E6XKSA1 | RF Bipolar Transistors MOSFET N-Ch 700V 20.2A TO220-3 | ||
Infineon Technologies |
IPP65R190CFDXKSA1 | MOSFET HIGH POWER_LEGACY | |
| IPP65R190C6 | MOSFET N-Ch 700V 20.2A TO220-3 | ||
| IPP65R190C7 | MOSFET HIGH POWER_NEW | ||
| IPP65R190CFD | MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2 | ||
| IPP65R190CFD , 2SJ144 | New and Original | ||
| IPP65R190CFD 65F6190 | New and Original | ||
| IPP65R190CFD,65R190C | New and Original | ||
| IPP65R190CFDA | New and Original | ||
| IPP65R190E6 | MOSFET N-Ch 700V 20.2A TO220-3 |