IPP65R190E6XKSA1

Mfr. #:: IPP65R190E6XKSA1
Manufacturer:: Infineon Technologies
Description:: RF Bipolar Transistors MOSFET N-Ch 700V 20.2A TO220-3
Lifecycle:: New from this manufacturer.
Datasheet:: IPP65R190E6XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Infineon Technologies

Product Category: Transistors - FETs, MOSFETs - Single

Series: IPP65R190

Packaging: Tube

Part-Aliases: IPP65R190E6 IPP65R190E6XK SP000849876

Unit-Weight: 0.211644 oz

Tradename: CoolMOS

Package-Case: TO-220-3

Technology: Si

Number-of-Channels: 1 Channel

Transistor-Type: 1 N-Channel

Id-Continuous-Drain-Current: 20.2 A

Vds-Drain-Source-Breakdown-Voltage: 700 V

Rds-On-Drain-Source-Resistance: 190 mOhms

Transistor-Polarity: N-Channel

Tags: IPP65R19, IPP65R1, IPP65, IPP6, IPP

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP65R190E6XKSA1 Description

***et: Trans MOSFET N-CH 700V 20.2A 3-Pin TO-220 Tube

***p One Stop Japan: 650V COOLMOS E6 POWER TRANSISTOR

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Market price

Part #	Mfg.	Description	Stock	Price
IPP65R190E6XKSA1 DISTI # 31291757	Infineon Technologies AG	Trans MOSFET N-CH 700V 20.8A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	500	500:$1.8612
IPP65R190E6XKSA1 DISTI # IPP65R190E6XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 20.2A TO220 RoHS: Compliant Min Qty: 1 Container: Tube	124In Stock	1000:$1.7504 500:$2.0754 100:$2.4380 10:$2.9760 1:$3.3100
IPP65R190E6XKSA1 DISTI # IPP65R190E6XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 20.2A 3-Pin TO-220 Tube - Bulk (Alt: IPP65R190E6XKSA1) Min Qty: 241 Container: Bulk	Americas - 0	723:$1.2900 1205:$1.2900 2410:$1.2900 241:$1.3900 482:$1.3900
IPP65R190E6XKSA1 DISTI # IPP65R190E6XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 20.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R190E6XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	3000:$1.3900 5000:$1.3900 1000:$1.4900 2000:$1.4900 500:$1.5900
IPP65R190E6XKSA1 DISTI # 726-IPP65R190E6XKSA1	Infineon Technologies AG	MOSFET N-Ch 700V 20.2A TO220-3 RoHS: Compliant	440	1:$3.0000 10:$2.5500 100:$2.2100 250:$2.1000 500:$1.8800
IPP65R190E6 DISTI # 726-IPP65R190E6	Infineon Technologies AG	MOSFET N-Ch 700V 20.2A TO220-3 RoHS: Compliant	245	1:$3.0000 10:$2.5500 100:$2.2100 250:$2.1000 500:$1.8800
IPP65R190E6XKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB RoHS: Compliant	500	1000:$1.3700 500:$1.4400 100:$1.5000 25:$1.5600 1:$1.6800
IPP65R190E6XKSA1 DISTI # 8576930	Infineon Technologies AG	MOSFET N-CH 700V 20.8A COOLMOS E6 TO-220, TU	350	1500:£1.4800 500:£1.6090

Related products

Image	Part #	Description
	Mfr.#: IPP65R190CFD OMO.#: OMO-IPP65R190CFD	MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2
	Mfr.#: IPP65R190E6XKSA1 OMO.#: OMO-IPP65R190E6XKSA1	MOSFET N-Ch 700V 20.2A TO220-3
	Mfr.#: IPP65R190C7 OMO.#: OMO-IPP65R190C7	MOSFET HIGH POWER_NEW
	Mfr.#: IPP65R190C7FKSA1 OMO.#: OMO-IPP65R190C7FKSA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPP65R190C6 OMO.#: OMO-IPP65R190C6	MOSFET N-Ch 700V 20.2A TO220-3
	Mfr.#: IPP65R190C7 OMO.#: OMO-IPP65R190C7-1190	MOSFET HIGH POWER_NEW
	Mfr.#: IPP65R190C7FKSA1 OMO.#: OMO-IPP65R190C7FKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 13A TO220
	Mfr.#: IPP65R190CFD 65F6190 OMO.#: OMO-IPP65R190CFD-65F6190-1190	New and Original
	Mfr.#: IPP65R190CFDA OMO.#: OMO-IPP65R190CFDA-1190	New and Original
	Mfr.#: IPP65R190E6XKSA1 OMO.#: OMO-IPP65R190E6XKSA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 700V 20.2A TO220-3

Availability

Stock:: Available
On Order:: 4500
Enter Quantity:

Current price of IPP65R190E6XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.94~~; ~~$1.94~~

10: ~~$1.84~~; ~~$18.38~~

100: ~~$1.74~~; ~~$174.15~~

500: ~~$1.64~~; ~~$822.40~~

1000: ~~$1.55~~; ~~$1 548.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPP65R190E6XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes