PartNumber | IPP65R190CFD | IPP65R190CFDAAKSA1 | IPP65R190CFDXKSA1 |
Description | MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2 | MOSFET N-Ch 650V 17.5A TO220-3 | MOSFET HIGH POWER_LEGACY |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
Id Continuous Drain Current | 17.5 A | 17.5 A | - |
Rds On Drain Source Resistance | 190 mOhms | 190 mOhms | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 68 nC | - | - |
Pd Power Dissipation | 151 W | - | - |
Configuration | Single | Single | - |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Tube | Tube | Tube |
Height | 15.65 mm | 15.65 mm | 15.65 mm |
Length | 10 mm | 10 mm | 10 mm |
Series | CoolMOS CFD2 | CoolMOS CFDA | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 4.4 mm | 4.4 mm | 4.4 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 6.4 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8.4 ns | - | - |
Factory Pack Quantity | 500 | 500 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | IPP65R190CFDXKSA1 IPP65R19CFDXK SP000881160 | IPP65R190CFDA IPP65R19CFDAXK SP000928266 | IPP65R190CFD IPP65R19CFDXK SP000881160 |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |